A cleaning machine and a cleaning method for a photomask pellicle are provided. The cleaning machine at least includes: an air knife and a cleaning device. The air knife is configured to blow away contamination particles on the surface of the photomask pellicle. The cleaning device is configured to spray cleaning liquid to the surface of the photomask pellicle, to weather the contamination particles failed to be blown away by the air knife through the volatilization of the cleaning liquid. The air knife is also configured to blow away the weathered contamination particles.

An absorbent is provided, which is produced from component A, a foaming agent, and component B, a resin. Furthermore, a device and a method for producing the absorbent and a method for absorbing a liquid by means of the absorbent are provided.

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.
R.sup.1.sub.x(CH.sub.3).sub.3-xSiN(R.sup.2).sub.2  [1]
R.sup.1 is selected from the group consisting of a H and a C.sub.1-C.sub.10 hydrocarbon group; x is an integer of 1 to 3; and R.sup.2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.

A substrate processing method that includes a processing liquid supplying step which supplies a processing liquid to a surface of a substrate, a processing film forming step in which the processing liquid on the surface of the substrate is solidified or cured to form a processing film that holds removal objects present on the surface of the substrate, and a removing step in which a removing liquid is supplied to the surface of the substrate to thereby remove the processing film from the surface of the substrate in a state that the removal objects are held by the processing film. The processing liquid contains a dissolution component which dissolves at least one of a front layer of the substrate and the removal objects as a dissolution object. The processing liquid supplying step includes a dissolution step which partially dissolves the dissolution object by the dissolution component in the processing liquid supplied to the surface of the substrate.

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.