A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

The substrate processing device according to one embodiment may comprise: a chamber unit provided with a processing space therein and comprising an inclined chamber surface having an opening; a door unit comprising an inclined door surface, which corresponds to the inclined chamber surface, and capable of being coupled to the chamber unit; and a door driving unit for driving the door unit so as to open/close the processing space.

A coating removal process includes providing a coating removal vessel having a sealable processing volume therein, providing a coating removal fluid, which reacts with the coating, at an elevated temperature above the ambient temperature surrounding the removal vessel, in the sealable processing volume, locating a component having a coating thereon to be removed in the processing volume, sealing the sealable process volume from the ambient surrounding the processing volume, heating the coating removal fluid to a temperature greater than the boiling point thereof at the pressure of the surrounding ambient, removing the coating from the component using the coating removal fluid at the temperature greater than the boiling point thereof at the pressure of the surrounding ambient, reducing the temperature of the coating removal fluid to a temperature less than the boiling point thereof at the pressure of the surrounding ambient, venting the sealable volume to the surrounding ambient, and removing the component from the processing volume.

The substrate processing device according to one embodiment may comprise: a chamber unit provided with a processing space therein and comprising an inclined chamber surface having an opening; a door unit comprising an inclined door surface, which corresponds to the inclined chamber surface, and capable of being coupled to the chamber unit; and a door driving unit for driving the door unit so as to open/close the processing space.

The inventive concept provides a substrate treating method. The substrate treating method includes first treating a substrate in a treating space according to a reference recipe; second treating a substrate in the treating space according to the reference recipe after the first treating; and optimizing an inner ambient of the treating space according to the reference recipe, and wherein the optimizing includes a purge operation of supplying and discharging a treating fluid to/from the treating space.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.

There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.