A method for removing foreign substances from a camera system is provided. The camera system includes a camera device with a transparent cover having a piezoelectric component. First, a type of the foreign substances is identified based on temperature, an image captured by the camera system, and a voltage change of the piezoelectric component. A sequence of frequencies is applied to the piezoelectric component and a resonant frequency is acquired. Thereafter, the foreign substances are removed from the camera system. A vibration frequency and a vibration time period for the piezoelectric component are determined according to the identified type of the foreign substances. The vibration frequency is based on the resonant frequency. The piezoelectric component is driven with the vibration frequency and the vibration time period, such that at least a portion of the foreign substances are removed from the transparent cover through vibration of the piezoelectric component.

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

The invention generally relates to systems with anti-fouling control and methods for controlling fouling within a channel of a plug flow crystallizer. In certain aspects, the invention provides a system that includes a plug flow crystallizer having a channel, one or more heating/cooling elements, each operably associated with a different segment of the channel, and a controller. The controller is operably coupled to the one or more heating/cooling elements and configured to implement a temperature profile within the channel of the plug flow crystallizer that grows crystals in a plug of fluid that flows through a first segment of the channel and dissolves encrust in a second segment of the channel while having minimal impact on crystal growth in the plug of fluid in the second segment of the channel. In certain embodiments, these segments may be cyclically alternated, in that the segment in which crystal grows in one cycle becomes the segment in which crystal dissolves in the next cycle and vice versa, to realize a fully continuous crystallization process.

A tool includes a head that extends form the flexible section, an emitter within the head; and a nozzle to eject a cooling fluid therefrom. A method of additively manufacturing a component including delivering series of thermal shocks to a conglomerated powder within an internal passage of an additively manufactured component to facilitate removal of the conglomerated powder.

A substrate processing system is disclosed, comprising: a vacuum transfer module; a substrate processing module connected to the vacuum transfer module and configured to process a substrate in a depressurized environment; a load-lock module connected to the vacuum transfer module; at least one substrate cooling stage disposed in the load-lock module; at least one substrate transfer robot disposed the vacuum transfer module and having at least one end effector; and a controller configured to control a particle removal operation. The operation includes: cooling at least one dummy substrate placed on said at least one substrate cooling stage to a first temperature; and holding said at least one end effector in any one of a plurality of positions in the vacuum transfer module or the substrate processing module for a first time period in a state where at least one cooled dummy substrate is placed on said at least one end effector.

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

In described examples, a transducer vibrates a lens element in a heating mode and a cleaning mode. Controller circuitry activates the transducer in the heating mode in response to an estimated temperature, and activates the transducer in the cleaning mode after the transducer is activated in the heating mode.

A cleaning method for removing a deposit in a processing chamber is provided. The cleaning method includes adjusting a temperature in the processing chamber to a first temperature; supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature; adjusting the temperature in the processing chamber to a second temperature that is higher than the first temperature; and supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Embodiments of the invention provide systems and methods for water treatment and/or desalination.