The embodiments discussed herein are related to a steam peeling device for an automobile tinting film comprising: a steam tarpaulin in the form of a rectangular oval; a wire frame sleeve seam part in which an outer seam part of the steam tarpaulin is rolled, folded and sewn at regular intervals; and a steam jack formed by fusion on one side of the middle of the steam tarpaulin; and a steam peeling device body in which a wire frame band having a certain length is inserted into the wire frame sleeve seam part, and a banding adjusting pinial formed at the end thereof are cross-pulled out to the upper edge slit in the middle part of the welding end of the steam tarpaulin wire frame sleeve seam part, the improvement of which includes: a wire frame banding module that is rivet assembled on both surfaces of the steam tarpaulin in contact with a slit in the middle part of the upper side border of the wire frame sleeve seam part, a wire frame sleeve stainless pipe in which a banding hole is cut and formed in the middle; a wire frame banding top plate having a length and a constant width standard of the wire frame sleeve stainless pipe, which is assembled in the front part of the steam tarpaulin of a portion where both ends of the wire frame band 4 intersect and protrude on both sides of the banding hole of the wire frame sleeve stainless pipe via the inside of the wire frame sleeve seam part; a pair of tapered slit fitting members that is integrally protruded and formed at the standard intervals of the banding holes on both sides of the upper border of the wire frame banding top plate; a U-shaped groove that is formed in a back face border of the upper side end of the tapered slit fitting member and a back face border on the lower side of the wire frame slit top plate; a pair of gripping parts that are formed to protrude at a predetermined interval to the right and left in the middle part of the front face of the wire frame banding top plate; a wire frame fixing groove that is formed in the vicinity of the wire frame banding top plate inside the pair of gripping parts; a cover plate which is a rectangular member having a standard corresponding to the back face part of the wire frame banding top plate; and a plurality of rivet holes that are penetrated opposite to each other in the wire frame banding top plate and the cover plate. The steam peeling device of the present invention solves the problem of the conventional case that the wire frame banding is loosened during the steam peeling operation, the steam tarpaulin is separated, or a part of the steam is released, and thereby solves the trouble of resetting the wire frame banding during operation, thereby l

The embodiments disclosed are related to a steam peeling device for an automobile tinting film which includes: a wire frame banding module, a wire frame sleeve stainless pipe; a wire frame stent top plate; a pair of tapered slit fitting members; a U-shaped groove; a pair of gripping parts; a wire frame fixing groove; a cover plate; and a plurality of rivet holes. The steam peeling device of the present invention solves the problem of the conventional case that the wire frame banding is loosened during the steam peeling operation, the steam tarpaulin is separated, or a part of the steam is released, and thereby solves the trouble of resetting the wire frame banding during operation, thereby lowering the product unit cost through product productivity and function improvement, and reducing the time and labor costs further without resetting during operation along with the convenience of operation.

A system may be configured to detect an obstruction on sensor at least partially obstructing or distorting a portion of the field of view of the sensor. The system may also be configured to mitigate the effects of the obstruction or at least partially remove the obstruction from the sensor. The system may be configured to receive one or more signals from a sensor configured to generate signals indicative of an environment, which may include one or more objects, in which the sensor is present. The system may be configured to determine, for example, classify, based at least in part on the one or more signals, an obstruction or distortion on a surface of the sensor, and initiate a response, based at least in part on the determination, to mitigate effects of the obstruction and/or at least partially remove the obstruction.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.

By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

A sucker rod cleaning system includes an inductive heating device, a feed mechanism, a first support and a second support. An electromagnet of inductive heating device includes a wire coil head that is configured to inductively heat a sucker rod positioned within a heating zone. The feed mechanism is configured to feed a sucker rod through the heating zone in a feed direction. The first support is positioned on an upstream side of the wire coil head, and is configured to support a portion of a sucker rod as it is fed through the heating zone by the teed mechanism, The second support is positioned on a downstream side of the wire coil head, and is configured to support a portion of a sucker rod as it is fed through the heating zone by the feed mechanism.

A method of cleaning is provided in which heat is applied to a pipe, vessel, process equipment, filter or associated fitting(s) in a system having chemical or nuclear material, and the application of heat results in cleaning in place without disassembly of the system and/or recovery of product.

Embodiments of baking chambers are provided herein. In some embodiments, a baking chamber for baking a substrate includes: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a shroud disposed in the interior volume opposite the heater, wherein the shroud includes a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support a substrate in the interior volume between the heater and the shroud, wherein the shroud includes a plurality of first openings to facilitate the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior volume extends from the gas inlet, around the heater, and to the gas outlet.

In the disclosed solution sand to be cleaned is thermally cleaned by rotating the sand being cleaned in a large oven (1) by rotating the oven (1). Before cleaning, the sand may be pre-processed by crushing any lumps and cleaning the sand fraction by magnetic separation. Preprocessed sand to be cleaned and heat energy are fed (5) into the rotating oven. The oven (1) is set slightly inclined so that a second end of the oven (1) is lower than a first end. The inclination and rotating speed of the oven (1) as well as the feed amount of sand are adjusted, whereby the advancing speed of the sand may be adjusted, as well as the ratio of the sand being cleaned to the volume of the oven (1) kept as desired. The temperature of the oven (1) is monitored at the coldest area of the oven, which is substantially at the second end of the oven. The temperature of the oven (1) is adjusted by adjusting the amount of heat energy fed in. By means of temperature monitoring and knowing the advancing speed of the sand, it is also possible to determine the average temperature of the sand and adjust it as desired by adjusting the supplied heat energy. Finally, the cleaned sand is let run (12) from the second end of the oven (1).

Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

An apparatus for transferring a substrate to a substrate processing chamber is provided. The apparatus comprises: a substrate transfer chamber having a floor provided with a first magnet and a sidewall connected to the substrate processing chamber and having an opening through which a substrate is loaded into and unloaded from the substrate processing chamber; a substrate transfer module including a substrate holder configured to hold the substrate and a second magnet having a repulsive force against the first magnet, and configured to move in the substrate transfer chamber by magnetic levitation using the repulsive force; and a heating device configured to heat the substrate transfer module to release contaminants adhered to a surface of the substrate transfer module.