A system which can be manually/automatically activated to ensure instant cleaning of decontamination liquid and gas placed into cylindrical pressure tubes against CBRN threats, wherein the system includes: a decontamination liquid/gas used for cleaning chemical, biologic, radiological and nuclear threats and minimizing effects thereof, a decontamination tube used for discharging decontamination liquid/gas placed therein, a decontamination pyrotechnic igniter-based on pyrotechnic used for ignition of the decontamination tube, a control unit providing manual or automatic operation of the system, and at the same time communication thereof with the hardware units in the system, and a control card located on the control unit, having printed circuit boards with embedded software developed for enabling the control.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

In chemical processes for cracking hydrocarbons, reactors are subject to coking. This results in carburization of the metal substrate for the reactor leading to a reduced reactor life. If the reactor is subject to a decoke process, followed by a steam scour and nitriding there is a reduced tendency to carburization of the metal substrate improving the reactor life.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume. The method further comprises permitting the reactive nitrogen species to react with the ammonium fluoride to convert the aluminum fluoride to aluminum nitride.

In chemical processes for cracking hydrocarbons, reactors are subject to coking. This results in carburization of the metal substrate for the reactor leading to a reduced reactor life. If the reactor is subject to a decoke process, followed by a steam scour and nitriding there is a reduced tendency to carburization of the metal substrate improving the reactor life.

A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

The present application discloses a method for cleaning a process chamber and an application thereof. The method for cleaning a process chamber includes: (a) turning on a remote plasma system, exciting a clean-process gas into plasma, and supplying remote plasma to the process chamber; (b) after operation of the remote plasma system reaches a stable state, turning on a radio-frequency power supply system in the process chamber, re-exciting and enhancing the remote plasma positioned in the process chamber by the radio-frequency power supply system, and using both the remote plasma system and the radio-frequency power supply system for jointly acting and cleaning the process chamber during a period of cleaning time; (c) when the cleaning of the process chamber is completed, firstly turning off the radio-frequency power supply system in the process chamber; and (d) then turning off the remote plasma system.