Provided is a method of producing a target material with reduced particle generation during sputtering, which is a method of producing a sputtering target material whose material is an alloy M, including a sintering step of sintering a mixed powder obtained by mixing a first powder and a second powder. A material of the first powder is an alloy M1 in which the proportion of a B content is from 40 at. % to 60 at. %. A material of the second powder is an alloy M2 in which the proportion of a B content is from 20 at. % to 35 at. %. The proportion of a B content in the mixed powder is from 33 at. % to 50 at. %. A metallographic structure including a (CoFe).sub.2B phase and a (CoFe)B phase is formed in the sintering step. A boundary length per unit area Y (1/μm), which is obtained by measuring a boundary length between the (CoFe).sub.2B phase and the (CoFe)B phase using a scanning electron microscope, and a proportion X (at. %) of a B content of the alloy M satisfy the expression

Y<−0.0015×(X−42.5).sup.2+0.15.

Provided is a method of producing a target material with reduced particle generation during sputtering, which is a method of producing a sputtering target material whose material is an alloy M, including a sintering step of sintering a mixed powder obtained by mixing a first powder and a second powder. A material of the first powder is an alloy M1 in which the proportion of a B content is from 40 at. % to 60 at. %. A material of the second powder is an alloy M2 in which the proportion of a B content is from 20 at. % to 35 at. %. The proportion of a B content in the mixed powder is from 33 at. % to 50 at. %. A metallographic structure including a (CoFe).sub.2B phase and a (CoFe)B phase is formed in the sintering step. A boundary length per unit area Y (1/μm), which is obtained by measuring a boundary length between the (CoFe).sub.2B phase and the (CoFe)B phase using a scanning electron microscope, and a proportion X (at. %) of a B content of the alloy M satisfy the expression

Y<−0.0015×(X−42.5).sup.2+0.15.

This application relates to a method of preparing a composite material for an electric wiring connector. In one embodiment, the method includes preparing a powder mixture including (i) a metal powder composed of aluminum or aluminum alloy particles and magnesium particles and (ii) a polymer powder. The method may also include sintering the powder mixture to produce a composite material for the electric wiring connector using a spark plasma sintering (SPS) process. This application also relates to a composite material for an electric wiring connector prepared through the method described above. This application further relates to a method of manufacturing an electric wiring connector, the method including forming a housing of the electric wiring connector with the composite material. This application further relates to an electric wiring connector manufactured by the method.

This application relates to a method of preparing a composite material for an electric wiring connector. In one embodiment, the method includes preparing a powder mixture including (i) a metal powder composed of aluminum or aluminum alloy particles and magnesium particles and (ii) a polymer powder. The method may also include sintering the powder mixture to produce a composite material for the electric wiring connector using a spark plasma sintering (SPS) process. This application also relates to a composite material for an electric wiring connector prepared through the method described above. This application further relates to a method of manufacturing an electric wiring connector, the method including forming a housing of the electric wiring connector with the composite material. This application further relates to an electric wiring connector manufactured by the method.

The invention belongs to the field of amorphous alloys, and more specifically, relates to a method for calibrating the internal temperature field of amorphous alloy prepared by spark plasma sintering. First, the part required for temperature field calibration inside the bulk amorphous alloy sample obtained by spark plasma sintering is cut into a series of small amorphous alloy samples, and the isothermal crystallization treatment is performed to obtain the crystallization time of different parts of the sample. An annealing-isothermal crystallization experiment is performed on the adopted amorphous alloy powder at different annealing temperatures, and the functional relationship between the annealing temperature and the crystallization time is obtained. The crystallization time of different parts inside the amorphous alloy sample is substituted into this functional relationship, the temperature distribution during the temperature holding stage during the sintering of different parts inside the amorphous alloy sample can be obtained.

The invention belongs to the field of amorphous alloys, and more specifically, relates to a method for calibrating the internal temperature field of amorphous alloy prepared by spark plasma sintering. First, the part required for temperature field calibration inside the bulk amorphous alloy sample obtained by spark plasma sintering is cut into a series of small amorphous alloy samples, and the isothermal crystallization treatment is performed to obtain the crystallization time of different parts of the sample. An annealing-isothermal crystallization experiment is performed on the adopted amorphous alloy powder at different annealing temperatures, and the functional relationship between the annealing temperature and the crystallization time is obtained. The crystallization time of different parts inside the amorphous alloy sample is substituted into this functional relationship, the temperature distribution during the temperature holding stage during the sintering of different parts inside the amorphous alloy sample can be obtained.

A thermoelectric conversion material includes Mg.sub.2Si.sub.xSn.sub.1−x (where 0.3≤X≤1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB.sub.2, ZrB.sub.2, and HfB.sub.2.

A method of forming a consolidated component having a complex shape includes providing a first component having a first shape similar to the complex shape. The method further includes placing the first component in a chamber and surrounding the first component with a medium. The method further includes applying pressure and at least one of heat or electricity into the chamber to process the first component to form a consolidated component having the complex shape.

A method of forming a consolidated component having a complex shape includes providing a first component having a first shape similar to the complex shape. The method further includes placing the first component in a chamber and surrounding the first component with a medium. The method further includes applying pressure and at least one of heat or electricity into the chamber to process the first component to form a consolidated component having the complex shape.

This application relates to a method of preparing a composite material for a semiconductor test socket, and a composite material prepared through the method. In one embodiment, the method includes preparing a powder mixture including (i) a metal powder comprising aluminum or aluminum alloy particles and magnesium particles and (ii) a polymer powder. The method may also include sintering the powder mixture to produce the composite material using a spark plasma sintering (SPS) process. This application also relates to a method of manufacturing a semiconductor test socket, the method including forming an insulating portion of the semiconductor test socket with the composite material. This application further relates to a semiconductor test socket produced through the method.