It is provided an electrolysis and grinding combined machining device and method. The device includes a machine tool bed, a vertical moving mechanism and a horizontal moving mechanism which are provided on the machine tool bed. An electrode clamping device is provided on the vertical moving mechanism, and the electrode clamping device is configured to fix a tool electrode. An electrolysis tank is provided on the horizontal moving mechanism. A workpiece to be machined is placed in the electrolysis tank. The tool electrode includes a metal wire and abrasive materials distributed on a surface of the metal wire. The tool electrode and the workpiece to be machined are electrically connected with a pulse power source. A current sensor is arranged between the workpiece and the pulse power source. A data acquisition card is connected to the current sensor; the data acquisition card is electrically connected with an industrial personal computer.

It is provided an electrolysis and grinding combined machining device and method. The device includes a machine tool bed, a vertical moving mechanism and a horizontal moving mechanism which are provided on the machine tool bed. An electrode clamping device is provided on the vertical moving mechanism, and the electrode clamping device is configured to fix a tool electrode. An electrolysis tank is provided on the horizontal moving mechanism. A workpiece to be machined is placed in the electrolysis tank. The tool electrode includes a metal wire and abrasive materials distributed on a surface of the metal wire. The tool electrode and the workpiece to be machined are electrically connected with a pulse power source. A current sensor is arranged between the workpiece and the pulse power source. A data acquisition card is connected to the current sensor; the data acquisition card is electrically connected with an industrial personal computer.

The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H.sub.2O.sub.2, Na.sub.2CO.sub.3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H.sub.2O.sub.2, Na.sub.2CO.sub.3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

Electroerosion devices and methods for performing electroerosion machining are disclosed. The electroerosion devices may perform simultaneous electrical discharge machining and pulsed electrochemical machining (S-ED/PEC) through electrode assembly design and the use of two different working fluids.

Electroerosion devices and methods for performing electroerosion machining are disclosed. The electroerosion devices may perform simultaneous electrical discharge machining and pulsed electrochemical machining (S-ED/PEC) through the use of at least two different types of electrodes and a quasi-dielectric working fluid.

The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H.sub.2O.sub.2, Na.sub.2CO.sub.3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H.sub.2O.sub.2, Na.sub.2CO.sub.3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

A wafer processing system (1) is provided. The system (1) includes a processing tool (10) comprising at least one grinding member (16) used to remove material from a wafer substrate (80). The system (1) also includes an electrolyte supply line (361) used to supply an electrolyte to the wafer substrate (80). The system (1) further includes a holding module (20) for holding the wafer substrate (80). The holding module (20) includes a conductive base (21) and a conductive porous member (22) positioned on the top surface of the conductive base (21). A vacuum source (53) fluidly communicated with fluid channel (214) formed in the conductive base (21) to create a vacuum to hold the wafer substrate (80) on the conductive porous member (22). In addition, the system (1) includes an actuator assembly for driving a rotation of the grinding member (16) and a rotation of the conductive base (21), and a power supply module (45) to apply an electric current to the grinding member (16) and to the conductive porous member (22) through the conductive base (21).

A wafer processing system (1) is provided. The system (1) includes a processing tool (10) comprising at least one grinding member (16) used to remove material from a wafer substrate (80). The system (1) also includes an electrolyte supply line (361) used to supply an electrolyte to the wafer substrate (80). The system (1) further includes a holding module (20) for holding the wafer substrate (80). The holding module (20) includes a conductive base (21) and a conductive porous member (22) positioned on the top surface of the conductive base (21). A vacuum source (53) fluidly communicated with fluid channel (214) formed in the conductive base (21) to create a vacuum to hold the wafer substrate (80) on the conductive porous member (22). In addition, the system (1) includes an actuator assembly for driving a rotation of the grinding member (16) and a rotation of the conductive base (21), and a power supply module (45) to apply an electric current to the grinding member (16) and to the conductive porous member (22) through the conductive base (21).