A fixture assembly includes a first fixture portion, a second fixture portion that interfaces with the first fixture portion, and a sub-fixture movably mounted to the first fixture portion. A multiple of actuators selectively move the sub-fixture toward the second fixture portion. A method of manufacturing a fan blade includes deploying the sub-fixture from the first fixture portion to effectuate a peripheral diffusion bond to join the blade body and the cover of the fan blade.

A method of at least partially filling an opening in a workpiece made of metal, the opening being at least partially defined by one or more opening walls having one or more opening wall surfaces. The method includes providing an insert bondable with the workpiece, the insert having one or more insert engagement surfaces formed for engagement with the opening wall surface. The opening wall surface and the insert engagement surface are heated to a hot working temperature. The insert is subjected to an engagement motion, to move the insert engagement surface relative to the opening wall surface. While the insert is subjected to the engagement motion, the insert is also subjected to a translocation motion to move the insert at least partially into the opening, for engaging the insert engagement surface with the opening wall surface, for at least partially creating a metallic bond between the insert and the workpiece.

A method of joining a first component to a second component at respective connection surfaces, comprising, in order, applying a local surface treatment to the connection surface of at least one of the first and second components in order to locally alter the microstructure to a depth of between 60 μm and 10 mm below the connection surface; and joining the first component to the second component using a welding process.

A process for joining steel plate includes providing a steel plate and joining the steel plate to another material. The steel plate includes at least one surface having an Al—Si coating. The step of joining the steel plate to another material is performed while the steel plate is in an as- coated condition. Joining is performed using a forging process.

A bearing including a backing formed of a steel material, a lining formed of aluminum or an aluminum alloy, and a diffusion barrier layer disposed between the backing and the lining is provided. The diffusion barrier layer is formed of nickel or a nickel alloy and has a thickness ranging from 1 micron to 100 microns. The bearing is typically formed by cladding the lining or plating the steel backing with the diffusion barrier layer, bonding the lining and the backing with the diffusion barrier layer between, heating to a temperature of at least 400° C., and forming the bearing into a shape after or before the heating step.

A method of manufacturing a heat exchanger is provided. The method includes forming a first substrate by additively manufacturing a body defining a first outer surface and a second outer surface opposite the first outer surface, a first partial fluid flow channel formed within the first outer surface, a second partial fluid flow channel formed within the second outer surface, and at least one internal fluid flow channel completely formed within the body, and coupling the first substrate to a second substrate including a partial fluid flow channel formed within a surface of the second substrate such that the first partial fluid flow channel of the first substrate and the partial fluid flow channel of the second substrate combine to form a combined fluid flow channel.

An ultrasonic welding device for a secondary battery is provided. The ultrasonic welding device is configured to weld an overlapping surface of an electrode tab and an electrode lead in an electrode assembly. The ultrasonic welding device includes an anvil on which the overlapping surface of the electrode tab and the electrode lead are disposed. A horn is configured to apply ultrasonic waves to the overlapping surface of the electrode tab and the electrode lead while pressing the overlapping surface. The overlapping surface is disposed on the anvil. An electrode tab measuring part is configured to measure a thickness of the electrode tab disposed on the overlapping surface. A pressure adjusting device is configured to adjust a pressure applied to the overlapping surface by the anvil and the horn according to the thickness value of the electrode tab. The thickness value is measured by the electrode tab measuring part.

A method of manufacturing a heat exchanger is provided. The method includes forming a first substrate by additively manufacturing a body defining a first outer surface and a second outer surface opposite the first outer surface, a first partial fluid flow channel formed within the first outer surface, a second partial fluid flow channel formed within the second outer surface, and at least one internal fluid flow channel completely formed within the body, and coupling the first substrate to a second substrate including a partial fluid flow channel formed within a surface of the second substrate such that the first partial fluid flow channel of the first substrate and the partial fluid flow channel of the second substrate combine to form a combined fluid flow channel.

A method includes disposing a hydride of a transition metal on a first metallic material, where at least one of the first metallic material or a second metallic material includes a surface oxide layer. The method includes performing a diffusion bonding operation to bond the first metallic material to the second metallic material. During the diffusion bonding operation, the hydride of the transition metal chemically reacts with the surface oxide layer.

A method of operating a thermocompression bonding system is provided. The method includes the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate.