A method and an apparatus for collecting powder samples in real-time in powder bed fusion additive manufacturing may involves an ingester system for in-process collection and characterizations of powder samples. The collection may be performed periodically and uses the results of characterizations for adjustments in the powder bed fusion process. The ingester system of the present disclosure is capable of packaging powder samples collected in real-time into storage containers serving a multitude purposes of audit, process adjustments or actions.

According to the present disclosure, it is possible to inhibit the electrically conductive foreign substance from falling off and being peeled off from the electrode plate that has been already manufactured, so as to contribute in improving the safety property of the secondary battery. The manufacturing method of the electrode plate herein disclosed includes a precursor preparing step for preparing an electrode precursor 20A including an active material provided area A1 in which an electrode active material layer 24 is provided on a surface of the electrode core 22 and including a core exposed area A2 in which the electrode active material layer 24 is not provided and the electrode core 22 is exposed, and an active material provided area cutting step for cutting the active material provided area A1 by a pulse laser, and a core exposed area cutting step for cutting the core exposed area A2 by the pulse laser. Then, in the case where the pulse width (ns) of the pulse laser is represented by X and the lap rate (%) is represented by Y for the core exposed area cutting step, a condition represented by Y≥−3log X+106 is satisfied. According to the manufacturing method of the electrode plate as described above, it is possible to inhibit the electrically conductive foreign substance from falling off and being peeled off from the electrode plate that has been already manufactured, and thus it is possible to contribute in improving the safety property of the secondary battery.

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

A spatial filter is made by forming a structure comprising a focusing element and an opaque surface, the opaque surface being disposed remotely from the focusing element in substantially the same plane as a focal plane of the focusing element; and by forming a pinhole in the opaque surface at or adjacent to a focal point of the focusing element by transmitting a substantially collimated laser beam through the focusing element so that a point optimally corresponding to the focal point is identified on the opaque surface and imperfection of the focusing element, if any, is reflected on the shape and position of the pinhole so formed.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

A system includes an orientation determination system comprising a camera where the camera is configured to capture an image of an orientation feature of a physical dental model of a dental arch of a customer with material thermoformed thereon. The orientation determination system is configured to identify an offset of the physical dental model with respect to a fixture plate during positioning or before or after the physical dental model is positioned on the fixture plate by determining an actual orientation of the physical dental model based on the orientation feature. The system also includes a laser trimming system configured to cut the material along a trim line based on the identified offset while the fixture plate is moved about at least two axes to produce a dental aligner specific to the customer and being configured to reposition one or more teeth of the customer.

A device for producing and removing an internal contour from a planar substrate comprising: a beam-producing- and beam-forming arrangement which is configured to perform: a contour definition step wherein a laser beam is guided over the substrate to produce a plurality of individual zones of internal damage in a substrate material along a contour line defining the internal contour; a crack deformation step, wherein the laser beam is guided over the substrate and produces a plurality of individual zones of internal damage in the substrate material to form a plurality of crack line portions that lead away from the contour line into the internal contour; and a material removal-step, wherein a laser beam directed towards the substrate surface that inscribes a removal line through a thickness of the substrate at the internal contour causes the internal contour to detach from the substrate.

Aspects of the invention may be directed to a method of creating a predetermined structure from a diamond bulk. In some embodiments, the method may include: irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, the laser may create graphitization at locations where the focal point of the laser engages the diamond bulk; at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme; removing of the graphite from the diamond bulk; and extracting the predetermined structure from the diamond bulk.

The present disclosure relates to the field of Chemical Vapor Deposition (CVD) diamonds and their processing after fabrication. In particular, the present disclosures provides a method for coring and slicing a CVD diamond product, wherein the CVD diamond product comprises a CVD diamond and graphitized material covering several side-faces of the diamond. The method is carried out by an apparatus that provides a laser beam coupled into a fluid jet. The method comprises, for the coring, cutting the product with the laser beam to remove the graphitized material from the side-faces of the diamond. Further, the method comprises, for the slicing, cutting off one or more slices from the diamond with the laser beam.