A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

There is provided a laser processing apparatus that processes a workpiece by irradiation with a laser beam. The laser processing apparatus includes a holding unit including a holding surface that holds the workpiece and a laser irradiation unit that irradiates the workpiece held by the holding unit with the laser beam. The laser irradiation unit includes a laser oscillator, a collecting lens that focuses the laser beam emitted from the laser oscillator, and a foreign matter adhesion preventing unit that prevents adhesion of a foreign matter to the collecting lens.

A laser processing device for forming vias has a galvo mirror module, a first lens, a second lens, a focusing module, and a laser source. The laser source emits a laser beam through the first lens and the second lens to convert the laser beam into an incident ring beam. The galvo mirror module reflects the incident ring beam into a reflected ring beam into the focusing module to convert the reflected ring beam into a Bessel-like beam. The galvo mirror module has a scanning direction and shifts a reflection direction of the reflected ring beam to move an end of the reflected ring beam along the scanning direction. The focusing module has a third lens linearly slid along the scanning direction to reduce variations in shape and laser fluence of the Bessel-like beam focused at different positions.

A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.

A laser processing device includes: a light source configured to output laser light; a space light modulator for modulating the laser light output from the light source in accordance with a modulation pattern and outputting the modulated laser light; a converging lens for converging the laser light output from the space light modulator to an object, and forming a converging spot on the object; a movement unit for relatively moving the converging spot with respect to the object; and a control unit for relatively moving, while setting a position of the converging spot in a Z direction intersecting with an incident surface of the laser light on the object at a first Z position, the converging spot along a line extended in an X direction along the incident surface by controlling at least the space light modulator and the movement unit.

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Methods of laser processing a transparent material are disclosed. The method may include positioning the transparent material on a carrier and transmitting a laser beam through the transparent material, where the laser beam may be incident on a side of the transparent material opposite the carrier. The transparent material may be substantially transparent to the laser beam and the carrier may include a support base and a laser disruption element. The laser disruption element may disrupt the laser beam transmitted through the transparent material such that the laser beam may not have sufficient intensity below the laser disruption element to damage the support base.

The disclosure provides a control device of an annealing device, which is capable of further suppressing a temperature of a surface opposite to a laser irradiation surface from rising. A beam spot of a pulsed laser beam output from a laser light source on a surface of an annealed target is shaped into a long shape in one direction by a beam shaping optical element. A movement mechanism moves the beam spot with respect to the annealed target. The control device controls the laser light source and the movement mechanism and performs annealing by performing a sweep operation of moving the beam spot in a longitudinal direction of the beam spot with respect to the annealed target while causing the pulsed laser beam to be incident on the annealed target.