A method and an apparatus for collecting powder samples in real-time in powder bed fusion additive manufacturing may involves an ingester system for in-process collection and characterizations of powder samples. The collection may be performed periodically and uses the results of characterizations for adjustments in the powder bed fusion process. The ingester system of the present disclosure is capable of packaging powder samples collected in real-time into storage containers serving a multitude purposes of audit, process adjustments or actions.

A build system is provided with: a build apparatus that performs a build process for forming a build object by supplying build materials to an irradiation area of an energy beam from a supply system while irradiating a target object with the energy beam from an irradiation system; and a change apparatus that is configured to change a relative position between the energy beam and the target object, wherein the build system differentiates a condition of the build process that is performed at a first area of the target object and a condition of the build process that is performed at a second area of the target object.

Angled, single laser weld and a method of forming an angled, single laser weld including arranging a first and second faying surfaces of a first and second component adjacently to form an interface between the components; irradiating at least one of the first and second components at the interface with a laser, wherein the first faying surface defines a plane formed at an angle alpha in the range of +/−5 degrees to 60 degrees from an axis A perpendicular to the first front surface and the second faying surface matches the first faying surface; and forming a junction at the interface with an hourglass shaped weld.

A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

The present invention benefits from the determination that pre-selected spectral bandwidths that avoid the spectrum of an electronic transition of a metal/alloy vapor allow for welds substantially free from detritus that may discolor the weld. Accordingly, the present invention provides analytical methods, welding methods and fiber lasers configured to provide high quality metal/alloy welds.

An apparatus for carrying out a method for producing an object using selective powder melting and by building up layers of powder material. The apparatus includes a build chamber configured to accommodate the object being produced and a powder delivery device equipped with a powder storage container and configured to supply material powder into the build chamber, a powder layer preparation unit to prepare successive layers of the supplied material powder on a substrate arranged in the build chamber, an irradiation device configured to irradiate a prepared powder layer to thereby melt the prepared powder layer locally, and a protective gas circulation device configured to circulate a protective gas present in the build chamber. At least one air conditioning device is also included and is configured to condition one or more of a temperature or a humidity of the protective gas circulated by the protective gas circulation device.

A process for the continuous production of thin-walled, radially closed hollow profiles which are composed of nonferrous metals and have a small cross section comprises supply of a flat strip of the nonferrous metal to a forming apparatus (212) at a first supply speed, where the thickness of the strip corresponds to the wall thickness of the hollow profile. The forming apparatus (212) is configured for continuous forming of the flat strip supplied into a shape corresponding to the hollow profile. After forming, two opposite edges of the flat strip rest flush against one another in a contact region. A welding apparatus (216) continuously welds the edges which rest flush against one another by means of a laser which emits light having a wavelength of less than 600 nm. The laser heats a point in a welding region which has a diameter which is less than 20% of the cross-sectional dimension of the hollow profile. The welded hollow profile is taken off from the welding region, provided in a corrugator (225) with parallel or helical corrugation in sections and taken up in an uptake device (226).

A manipulator device such as a robot arm that is capable of increasing manufacturing throughput for additively manufactured parts, and allows for the manipulation of parts that would be difficult or impossible for a human to move is described. The manipulator can grasp various permanent or temporary additively manufactured manipulation points on a part to enable repositioning or maneuvering of the part.

Laser cutting on a plated steel sheet is executed by cutting the plated steel sheet by irradiating the plated steel sheet covered with a plate metal with laser light at a wavelength in a 1 micrometer band; and emitting assist gas onto a cut surface of the plated steel sheet, the cut surface being formed in the step of cutting, to make the plate metal fused by irradiation of the laser light flow to the cut surface so as to cover the cut surface with the plate metal.

A method for forming at least one freestanding microstructure on a diamond crystal includes the step of removing material from the diamond crystal so as to form a structured surface, wherein the removing of the material includes creating at least two trenches, each trench having a bottom and two side walls and wherein adjacent side walls of the at least two trenches form side walls of the structured surface. The method also includes the steps of depositing at least one masking layer on the structured surface, removing at least a portion of the at least one masking layer from the bottom of each of the at least two trenches, removing additional material from the diamond crystal at least along the side walls so as to deepen the trenches, and undercutting the diamond crystal so as to form the freestanding microstructure.