A shunt resistor according to the present invention includes a pair of electrode plates spaced apart from each other in a plate surface direction and a resistive alloy plate that connects the pair of electrode plates and that has a predetermined set resistance value. A surface of the resistive alloy plate is provided with a visually recognizable character string pattern that is formed by laser processing and that indicates the set resistance value of the resistive alloy plate, and a surface area and a carving depth of the character string pattern are set in such a manner that the resistive alloy plate has the set resistance value.

A shunt resistor according to the present invention includes a pair of electrode plates spaced apart from each other in a plate surface direction and a resistive alloy plate that connects the pair of electrode plates and that has a predetermined set resistance value. A surface of the resistive alloy plate is provided with a visually recognizable character string pattern that is formed by laser processing and that indicates the set resistance value of the resistive alloy plate, and a surface area and a carving depth of the character string pattern are set in such a manner that the resistive alloy plate has the set resistance value.

A laser printhead assembly for a laser printhead is disclosed herein. The laser printhead assembly may include a laser containment door; and a laser containment housing that is configured to form a sealed enclosure with a label support of a label. The sealed enclosure may be configured to include the label and the laser printhead. The laser containment door, in a laser-enabled position, may be configured to permit the laser printhead, via a light beam, to modify the label and the laser containment door, in a laserdisabled position, may be configured to prevent a light beam from escaping the laser containment housing.

A laser printhead assembly for a laser printhead is disclosed herein. The laser printhead assembly may include a laser containment door; and a laser containment housing that is configured to form a sealed enclosure with a label support of a label. The sealed enclosure may be configured to include the label and the laser printhead. The laser containment door, in a laser-enabled position, may be configured to permit the laser printhead, via a light beam, to modify the label and the laser containment door, in a laserdisabled position, may be configured to prevent a light beam from escaping the laser containment housing.

The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

A method for thinning a wafer is provided which is related to the field of semiconductor technologies, to resolve problems of a low yield, a complex process, and high preparation costs of a SiC power device. The wafer which may alternatively be understood as a composite substrate, includes a first silicon carbide layer, a dielectric layer, and a second silicon carbide layer that are disposed in a stacked manner. The wafer has a first side and a second side that are opposite to each other, and a side that is of the second silicon carbide layer and that is away from the first silicon carbide layer is the first side of the wafer.

A method for thinning a wafer is provided which is related to the field of semiconductor technologies, to resolve problems of a low yield, a complex process, and high preparation costs of a SiC power device. The wafer which may alternatively be understood as a composite substrate, includes a first silicon carbide layer, a dielectric layer, and a second silicon carbide layer that are disposed in a stacked manner. The wafer has a first side and a second side that are opposite to each other, and a side that is of the second silicon carbide layer and that is away from the first silicon carbide layer is the first side of the wafer.

A laser irradiation apparatus is a laser irradiation apparatus including a laser light source, the laser irradiation apparatus including a failure prediction unit configured to perform failure prediction on a movable part used when a substrate is processed by the laser light source, in which the failure prediction unit acquires a physical quantity when the movable part is movable, and derives a failure time of the movable part based on an acquired physical quantity.

Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

A method of calibrating a control system based on a parametric value of a component. The method includes receiving a current from a component of the control system. The component is communicatively coupled to a controller and has a parametric resistor with a parametric resistance value correlating to a parametric value associated with the component. The method further includes determining the resistance value of the parametric resistor by measuring a parametric voltage rating from the current. The method further includes mapping the resistance value to the parametric value associated with the component. The method further includes generating a calibration data set. The calibration data set is based on calibrating the control system to calibrate for the parametric value. The method further includes transmitting a signal to the component. The signal is based on the calibration data set and is configured to calibrate operation of the component.