A bonding sheet includes a copper foil and sinterable bonding films formed on both faces of the copper foil. The bonding films each contain copper particles and a solid reducing agent. The bonding sheet is used to bond to a target object to be bonded having at least one metal selected from gold, silver, copper, and nickel on a surface thereof. A bonded structure includes: a bonded object having at least one metal selected from gold, silver, copper, and nickel on a surface thereof; a copper foil; and a bonding layer including a sintered structure of copper particles; and the bonded object and the copper foil are electrically connected to each other via the bonding layer.

A field device for processing and automation technology includes a first and a second component that can each be mechanically connected at a joining surface by means of a joining point. Two metal surface layers are each applied at least to the joining surface of the first component and the joining surface of the second component. The metal of the surface layers is different from the metal of the first and/or the metal of the second component. A joining material is applied between the respective joining surfaces of the two components, wherein the joining material includes particles at least partially consisting of a metal that corresponds with the metal of the surface layers The joining of the two components occurs at a joining temperature below 300° C.

The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

A method of attaching a first metal object to a second metal object is presented. The first metal object and the second metal object are dissimilar materials. The first metal object comprises an upper surface and a lower surface. The method comprises: positioning the first metal object in intimate contact with the second metal object such that the second metal object is in contact with the lower surface of the first metal object; identifying at least one attachment location on the upper surface of the first metal object where the first metal object is in intimate contact with the second metal object; adding a powdered metal on the upper surface of the first metal object at the at least one attachment location; and firing a heat source at the powdered metal to melt the powdered metal and drive the melted powdered metal through the first metal object and into the second metal object.

The present invention consists in a method of welding a nickel strength lug with a bronze connecting pin and a brass contact ring in an accelerometer sensor, the strength lug being interleaved between the connecting pin and the contact ring, the welding being effected electrically with the strength lug pressed simultaneously against the connecting pin and the contact ring. Before welding, the strength lug undergoes deformation of its external surface at least on each of two portions of the surface respectively facing the connecting pin and the contact ring, the surface deformation creating on each of the portions asperities intended to come into local contact with the connecting pin and the contact ring, respectively.

Shapeable guide wire devices and methods for their manufacture. Guide wire devices include an elongate shaft member having a shapeable distal end section that is formed from a linear pseudoelastic nickel-titanium (Ni—Ti) alloy that has linear pseudoelastic behavior without a phase transformation or onset of stress-induced martensite. Linear pseudoelastic Ni—Ti alloy, which is distinct from non-linear pseudoelastic (i.e., superelastic) Ni—Ti alloy, is highly durable, corrosion resistant, and has high stiffness. The shapeable distal end section is shapeable by a user to facilitate guiding the guide wire through tortuous anatomy. In addition, linear pseudoelastic Ni—Ti alloy is more durable tip material than other shapeable tip materials such as stainless steel.

A lead-free solder which can reduce the occurrence of voids and a connecting member which uses the solder and has excellent adhesion, bonding strength, and workability are provided. The lead-free solder alloy contains Sn: 0.1-3% and/or Bi: 0.1-2%, and a remainder of In and unavoidable impurities and has the effect of suppressing the occurrence of voids at the time of soldering. The connecting member is prepared by melting the lead-free solder alloy, immersing a metal substrate in the melt, and applying ultrasonic vibrations to the molten lead-free solder alloy and the metal substrate to form a lead-free solder alloy layer on the surface of the metal substrate. A heat sink and a package are soldered to each other through this connecting member by reflow heating in the presence of flux.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.

A method is disclosed for electrically bonding a first semiconductor component to a second semiconductor component, both components including arrays of contact areas. In one aspect, prior to bonding, layers of an intermetallic compound are formed on the contact areas of the second component. The roughness of the intermetallic layers is such that the intermetallic layers include cavities suitable for insertion of a solder material in the cavities, under the application of a bonding pressure, when the solder is at a temperature below its melting temperature. The components are aligned and bonded, while the solder material is applied between the two. Bonding takes place at a temperature below the melting temperature of the solder. The bond can be established only by the insertion of the solder into the cavities of the intermetallic layers, and without the formation of a second intermetallic layer.