B23K35/322

BONDING WIRE FOR SEMICONDUCTOR DEVICE
20170365576 · 2017-12-21 ·

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

Welding electrode

An electrode (10) is presented including a sheath (14) formed of a ductile material, an outer coating (16) including a flux material, and a core (12) including at least one of flux material and alloying material. The ductile material may be an extrudable subset of elements of a desired superalloy material and the alloying material may include elements that complement the ductile material to form a desired superalloy material when the electrode is melted. The outer coating may be formed of a flexible bonding material or it may be segmented (18, 20) to facilitate bending the electrode onto a spool. Any hygroscopic material of the electrode may be included in the core to protect it from exposure to atmospheric moisture.

DEPOSITION OF BRAZE PREFORM

A method of manufacturing includes depositing a braze filler adjacent to a void between a first component and a second component thus holding the components in position before brazing. The first and second components are heated to melt and flow the braze filler into the void. A braze joint is formed between the first and second components by cooling the braze filler. Depositing the braze filler can include laser cladding the braze filler to the first and/or second components adjacent the void. The method also optionally includes welding the first and second components in position with the braze filler adjacent to the void. The braze filler may be deposited as a powder, cold spray, melted brazed filament, spherical ball or any other suitable form.

Interconnection of conductor to feedthrough
09724524 · 2017-08-08 · ·

A method of interconnecting a conductor and a hermetic feedthrough of an implantable medical device includes welding a lead to a pad on a feedthrough. The feedthrough includes a ceramic insulator and a via hermetically bonded to the insulator. The via includes platinum. The pad is bonded to the insulator and electrically connected to the via, includes platinum, and has a thickness of at least 50 μm. The lead includes at least one of niobium, platinum, titanium, tantalum, palladium, gold, nickel, tungsten, and oxides and alloys thereof.

Paste for joining components of electronic modules, system and method for applying the paste

The invention relates to a paste, preferably for joining components of power electronics modules, the paste comprising a solder powder, a metal powder and a binder, wherein the binder binds solder powder and metal powder before a first heating. According to the invention, the binder is free of flux or is a flux having only low activation. In this way, a joining layer which exhibits only few included voids and good mechanical and electrical stability can be provided between a first and a second component.

Bonding wire for semiconductor devices

Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.

Hermetically sealed filtered feedthrough assembly having a capacitor with an oxide resistant electrical connection to an active implantable medical device housing

A hermetically sealed filtered feedthrough assembly attachable to an AIMD includes an insulator hermetically sealing a ferrule opening of an electrically conductive ferrule with a gold braze. A co-fired and electrically conductive sintered paste is disposed within and hermetically seals at least one via hole extending in the insulator. At least one capacitor is disposed on the device side. An active electrical connection electrically connects a capacitor active metallization and the sintered paste. A ground electrical connection electrically connects the gold braze to a capacitor ground metallization, wherein at least a portion of the ground electrical connection physically contacts the gold braze. The dielectric of the capacitor may be less than 1000 k. The ferrule may include an integrally formed peninsula portion extending into the ferrule opening spatially aligned with a ground passageway and metallization of an internally grounded feedthrough capacitor. The sintered paste may be of substantially pure platinum.

Filtered feedthrough assembly having a capacitor ground metallization electrically connected to the gold braze portion sealing a ferrule peninsula to a matching insulator cutout

A hermetically sealed filtered feedthrough assembly attachable to an AIMD includes an insulator hermetically sealing the opening of a ferrule with a gold braze. The ferrule includes a peninsula extending into the ferrule opening and the insulator has a cutout matching the peninsula. A sintered platinum-containing paste hermetically seals at least one via hole extending through the insulator. At least one capacitor is disposed on the device side. An active electrical connection electrically connects the capacitor active metallization to the sintered paste. A ground electrical connection electrically connects the capacitor ground metallization disposed within a capacitor ground passageway to the portion of the gold braze along the ferrule peninsula. The dielectric of the capacitor may be less than 1,000 k.

Ignition device component produced by cold metal transfer process

The present invention relates to noble metal-containing components prepared by cold metal transfer (CMT) methods, along with methods of preparing such components by CMT. More especially, an advantageous method of preparing a platinum metal group metal or alloy containing ignition device component by CMT is provided.

IGNITION DEVICE COMPONENT PRODUCED BY COLD METAL TRANSFER PROCESS
20210086279 · 2021-03-25 ·

The present invention relates to noble metal-containing components prepared by cold metal transfer (CMT) methods, along with methods of preparing such components by CMT. More especially, an advantageous method of preparing a platinum metal group metal or alloy containing ignition device component by CMT is provided.