Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 μm.

Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 μm.

Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 .Math.m.

Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 .Math.m.

A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.

A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.

An apparatus for manufacturing a display device includes a moving part including a belt that circulates, a roller that circulates the belt, and at least one meandering prevention portion that moves in a first direction parallel to a direction of a rotation shaft of the roller and prevents meandering of the belt, and a polishing head disposed corresponding to the moving part, the polishing head polishing a surface of a base material disposed on a first surface of the belt. A part of the at least one meandering prevention portion faces a second surface of the belt, the second surface being a side surface of the belt.

An apparatus for manufacturing a display device includes a moving part including a belt that circulates, a roller that circulates the belt, and at least one meandering prevention portion that moves in a first direction parallel to a direction of a rotation shaft of the roller and prevents meandering of the belt, and a polishing head disposed corresponding to the moving part, the polishing head polishing a surface of a base material disposed on a first surface of the belt. A part of the at least one meandering prevention portion faces a second surface of the belt, the second surface being a side surface of the belt.

Semiconductor wafers are polished simultaneously on both the front and the rear sides between an upper polishing plate and a lower polishing plate, each covered with a polishing pad, wherein a polishing gap (x.sub.1+x.sub.2) corresponding to a difference in the respective distances between facing surfaces of upper polishing pad and lower polishing pad which come into contact with the semiconductor wafer at the inner edge and at the outer edge of the polishing pads is changed incrementally or continuously during the polishing process.

Semiconductor wafers are polished simultaneously on both the front and the rear sides between an upper polishing plate and a lower polishing plate, each covered with a polishing pad, wherein a polishing gap (x.sub.1+x.sub.2) corresponding to a difference in the respective distances between facing surfaces of upper polishing pad and lower polishing pad which come into contact with the semiconductor wafer at the inner edge and at the outer edge of the polishing pads is changed incrementally or continuously during the polishing process.