A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

A grinding machine includes a working grinder and a holding unit. The working grinder includes a grinding wheel mounting section and a power mechanism. A grinding wheel is mounted on the grinding wheel mounting section. The holding unit includes a base, a movable seat, a holding device, and a grinding wheel trimming module. The grinding wheel trimming module includes a transmission shaft box, a motor, a holding claw, and a clamping cylinder. The holding claw is used for holding a trimming grinding wheel. The holding unit further includes a pedestal, and a clamping arm. The clamping arm is provided with a holding end. Thus, the holding end grips and moves the trimming grinding wheel to the holding claw which is driven by the clamping cylinder to clamp the trimming grinding wheel. Then, the holding end releases the trimming grinding wheel.

A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.

A grinding apparatus and a method for manufacturing a semiconductor device using the same are provided. A griding apparatus includes a chuck unit configured to receive a substrate, a grinding unit on a part of the chuck unit and configured to grind the substrate, and a dressing unit under a part of the grinding unit adjacent to the chuck unit and including a dressing board configured to dress the grinding unit and magnets under the dressing board.

A method of monitoring a chemical mechanical polishing (CMP) apparatus including an arm configured to swing a polishing component includes performing a CMP process; learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component; analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit; inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and determining whether to send an alarm and stop the CMP process based on the inspecting result.

Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.