A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

A method for controlling operation of an abrading system (500) comprises: —providing an abrading head (300), which comprises an abrading device (200) and a communication unit (MOD1), —providing parameter data (PAR1) associated with the abrading device (200), —storing the parameter data (PAR1) into a memory (MEM2) of the communication unit (MOD1), —transporting the abrading head (300) to an abrading site (SITE1), —electrically connecting the abrading head (300) to a driving unit (400) at the abrading site (SITE1), —transferring the parameter data (PAR1) from the communication unit (MOD1) to the driving unit (400) at the abrading site (SITE1), and —driving an electric motor (MOTOR1) of the abrading device (200) with the driving unit (400) according to the parameter data (PAR1).

Provided is a dressing device for a carrier. The dressing device comprises a dresser, a swing arm, a base and at least one damper. A first end and a second end of the swing arm are coupled to the dresser and the base, respectively, and the at least one damper is disposed inside the swing arm. Any axial vibration of the dresser or the swing arm during dressing for the carrier can be compensated or attenuated by the damper in an active manner properly, so as to make the surface of the carrier flatter and more uniform, which not only improves a removal rate of material and a polishing result of the surface in the subsequent chemical mechanical planarization process, but also prolongs the service life of the carrier. The present disclosure further relates to a polishing system for dressing the carrier by using the said dressing device.

Provided is a dressing device for a carrier. The dressing device comprises a dresser, a swing arm, a base and at least one damper. A first end and a second end of the swing arm are coupled to the dresser and the base, respectively, and the at least one damper is disposed inside the swing arm. Any axial vibration of the dresser or the swing arm during dressing for the carrier can be compensated or attenuated by the damper in an active manner properly, so as to make the surface of the carrier flatter and more uniform, which not only improves a removal rate of material and a polishing result of the surface in the subsequent chemical mechanical planarization process, but also prolongs the service life of the carrier. The present disclosure further relates to a polishing system for dressing the carrier by using the said dressing device.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A microbial dressing method for super abrasive tools includes a kind of microbe which is capable of consuming the bond in a certain manner is selected to perform the microbial dressing. Specifically, the microbe is inoculated and cultured in the culture medium to a certain concentration, then the dressing area of the abrasive tool is immersed into the culture liquid to remove the bond in the surface by the action of the microbe, and the control of the dressing amount is realized by controlling the microbe concentration and the soaking time. Precise dressing for super abrasive products, particularly for fine grained abrasive tools can be realized using the present method.

The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.

The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.