A sensor (1) which consists of a first electrode (3a), a ferroelectric layer (2) and a second electrode (3b) is described. The second electrode (3b) is connected to ground and the ferroelectric layer (2) is arranged between the first and second electrodes (3a, 3b).

A manipulator system configured to perform a work to a workpiece being moved by a moving device, includes a robotic arm, having one or more joints and to which a tool configured to perform the work to the workpiece is attached, an operating device configured to operate the robotic arm, a first imaging means configured to image the workpiece, while following the movement of the workpiece, a second imaging means fixedly provided in a work area to image a situation of the work to the workpiece, a displaying means configured to display an image imaged by the first imaging means and an image imaged by the second imaging means, and a control device configured to control the operation of the robotic arm based on an operating instruction of the operating device, while detecting a moving amount of the workpiece being moved by the moving device and carrying out a tracking control of the robotic arm according to the moving amount of the workpiece.

A robot body care system according to the present disclosure includes: a body care device which performs body care by applying physical stimulation to a user; and an information processing server including a reception unit that receives, from the outside as treatment information, a treatment method indicating a way of applying stimulation to the portions of the body of the user when body care is performed on the user, a command value generation unit that generates treatment command values as electrical signals on the basis of the treatment information entered into the reception unit, and a transmission unit that transmits the treatment command values to the body care device.

A flexible thin film transistor tactile sensor includes a piezoelectric semiconductor thin film channel of material whose conductivity can be electrostatically controlled connected with source and drain metals and sandwiched between bottom and top thin film insulators and at least one of a bottom and top gate metal, the sensor being supported on a flexible substrate. The piezoelectric property of the used material transduces pressure to electronic charge. The semiconductor property of the used material permits electrostatic modulation of the conductivity in TFT device architecture such that the device can be switched on and off. Transistor action provides gain for input signals, i.e., a modulation of the gate voltage induces strong current change between the source and drain, which can be leveraged to amplify the response to input pressure. The transistor forms the basis for sensor arrays, which are readily scalable to large size.

The present disclosure provides an object recognition apparatus, which includes: an actuator unit configured to contact an object and generate vibrations and transmit them through objects based on the inherent characteristic of the object; and a sensor unit connected to the actuator unit to receive the vibration and generate a voltage signal.

This patent application relates to apparatus and methods for enhanced microelectronic device handling. Apparatus comprises a pick arm having a pick surface configured for receiving a microelectronic device thereon, drives for moving the pick arm and reorienting the pick surface in the X, Y and Z planes and about a horizontal rotational axis and a vertical rotational axis, and a sensor device carried by the pick arm and configured to detect at least one of at least one magnitude of force and at least one location of force applied between the pick surface and a structure contacted by the pick surface or a structure and a microelectronic device carried on the pick surface. Related methods are also disclosed.

An apparatus for estimating a proximity direction of an obstacle includes an acoustic transmitter attached to a surface of the apparatus; a first acoustic receiver spaced apart from the surface of the apparatus; a second acoustic receiver spaced apart from the surface of the apparatus; and at least one processor configured to: control the acoustic transmitter to generate an acoustic wave along the surface; obtain first and second proximity direction signals based on first and second acoustic wave signals corresponding to the generated acoustic wave; and estimate a proximity direction of the obstacle with respect to the apparatus based on the first and second proximity direction signals.

Provided is a robot hand including: a plurality of claw members configured to grip a gripping target member; a support member that holds one end portions of the respective claw members such that the claw members are swingable; an actuator configured to drive the claw members; and a plurality of sensors attached to the respective claw members, each of the sensors being configured to sense an amount of deformation of a corresponding one of the claw members to which the sensors are attached, when the claw members grip the gripping target member.

A sensor arrangement for measuring at least one component of a force or a torque includes a sensor assembly having a first contact structure and a second contact structure, between which the at least one component of the force or torque is to be measured, and a plurality of sensor elements. The plurality of sensor elements are each connected by way of a first joint to the first contact structure and by way of a second joint to the second contact structure and configured to measure the component of force or torque between the first contact structure and the second contact structure. The first contact structure, the second contact structure and the plurality of sensor elements form a rolled-up structure that extends like a jacket along a surface of the sensor arrangement.

Embodiments of this application provide a method for preparing a thin film piezoresistive material, a thin film piezoresistive material, a robot, and a device. The method includes: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion; and curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material. The technical solutions provided by the embodiments of this application provide a method for preparing a thin film piezoresistive material through liquid dropping, thereby effectively controlling the thickness of the piezoresistive material, so that the prepared thin film piezoresistive material has a relatively small thickness.