To provide a method for producing a composite wafer capable of reducing a spurious arising by reflection of an incident signal on a joint interface between a lithium tantalate film and a supporting substrate, in the composite wafer including a supporting substrate having a low coefficient of thermal expansion, and a lithium tantalate film having a high coefficient of thermal expansion stacked on the supporting substrate. The method for producing a composite wafer is a method for producing a composite wafer that produces a composite wafer by bonding a lithium tantalate wafer having a high coefficient of thermal expansion to a supporting wafer having a low coefficient of thermal expansion, wherein prior to bonding together, ions are implanted from a bonding surface of the lithium tantalate wafer and/or the supporting wafer, to disturb crystallinity near the respective bonding surfaces.

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

Methods of bonding substrates are provided, including forming a thin film of a metal oxide on a bonding surface of both or either of a pair of substrates, at least one of which is a transparent substrate, and contacting the bonding surfaces of the pair of substrates with each other via the thin film of the metal oxide.

A machine for manufacturing printed laminated films, particularly for packaging, which comprises a frame that supports elements of traction of at least one primary film along an advancement path and elements of printing the primary film which are interposed along the advancement path. On the frame there are, in mutual succession, downstream of the printing elements, along the advancement direction of the primary film, elements of laminating a secondary film to the primary film with the interposition of an adhesive material and elements of electron beam polymerization of the adhesive material.

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

To provide a method for producing a composite wafer capable of reducing a spurious arising by reflection of an incident signal on a joint interface between a lithium tantalate film and a supporting substrate, in the composite wafer including a supporting substrate having a low coefficient of thermal expansion, and a lithium tantalate film having a high coefficient of thermal expansion stacked on the supporting substrate. The method for producing a composite wafer is a method for producing a composite wafer that produces a composite wafer by bonding a lithium tantalate wafer having a high coefficient of thermal expansion to a supporting wafer having a low coefficient of thermal expansion, wherein prior to bonding together, ions are implanted from a bonding surface of the lithium tantalate wafer and/or the supporting wafer, to disturb crystallinity near the respective bonding surfaces.

A method is provided for making electrical contact with an electronic component in the form of a stack formed from a plurality of material layers, which react upon application of an electric field, and a plurality of electrode layers, wherein each material layer is arranged between two of the electrode layers. An insulation structure is generated on at least one stack circumferential region of the stack, which exposes each second electrode layer of the at least one stack circumferential region for electrical contact to be made. Also, a contact-making structure is applied to the at least one stack circumferential region which is provided with the insulation structure. Before the step of generating the contact-making structure, the material layers are partially removed by a material-removing method such that the electrode layers are exposed close to the surface.

Methods of bonding substrates are provided, including forming a thin film of a metal oxide on a bonding surface of both or either of a pair of substrates, at least one of which is a transparent substrate, and contacting the bonding surfaces of the pair of substrates with each other via the thin film of the metal oxide.

The invention provides a diaphragm for a microspeaker and a manufacturing method thereof. The diaphragm is a single-layer diaphragm or a multi-layer diaphragm and comprises at least one layer of a chemically cross-linked thermoplastic polyester elastomer, wherein: the chemically cross-linked thermoplastic polyester elastomer has a loss factor less than or equal to 0.4 at a temperature range not higher than a softening temperature of thermoplastic polyester elastomer before chemical crosslinking plus 40 C., as measured by a rheological curve; and the diaphragm further has a yield strain in the range of 7% to 30%. The diaphragm for a microspeaker according to the technical solution of the present invention is easy to be prepared by thermoforming, and has appropriate modulus, good strength, elasticity, and thermal stability.

Provided are: a composite substrate for transferring a SiC single crystal; a method for manufacturing the composite substrate for transferring a SiC single crystal; and a method for manufacturing a SiC bonded substrate, in which warpage in a SiC single-crystalline substrate repeatedly used in a process for manufacturing a SiC bonded substrate is improved such that errors in conveying the SiC single-crystalline substrate or a problem of not being able to hold the SiC single-crystalline substrates on a processing table can be suppressed, the SiC single-crystalline substrate can be held on the processing table using an electrostatic chuck during a surface activation step or a bonding step, and the occurrence of bonding defects can be suppressed.

A composite substrate for transferring a SiC single crystal includes a SiC single-crystalline substrate and a first SiC polycrystalline substrate having a volume resistivity of 10 .Math.cm or less, in which one surface of the SiC single-crystalline substrate is directly bonded to one surface of the first SiC polycrystalline substrate by covalent bonds.