A method for manufacturing a bonded substrate, the method includes: bonding a first mother substrate including a first substrate and a second mother substrate including a second substrate to form a bonded mother substrate; cutting off a part of the first mother substrate along a dividing line of the bonded mother substrate to form a cutoff portion; dividing the bonded mother substrate along the dividing line; separating a bonded substrate from the bonded mother substrate, the bonded substrate including the first substrate and the second substrate bonded to the first substrate; forming a contact terminal on an end portion of the first mother substrate, the contact terminal contactable with an external terminal; forming a communication path between the first mother substrate and the second mother substrate along the dividing line.

A nozzle plate of a fluid ejection head for a fluid ejection device, a fluid ejection head containing the nozzle plate, and a method for making the fluid ejection head containing the nozzle plate. The nozzle plate contains two or more arrays of nozzle holes therein and a barrier structure disposed on an exposed surface of the nozzle plate between adjacent arrays of nozzle holes, wherein the barrier structure deters cross-contamination of fluids between the adjacent arrays of nozzle holes.

A piezoelectric film includes a plurality of laminated main baking unit PZT layers. A first seed layer is present at a lower surface side of a lowermost main baking unit PZT layer. A second seed layer is interposed between two adjacent main baking unit PZT layers at an intermediate position between the lowermost main baking unit PZT layer and an uppermost main baking unit PZT layer.

An actuator includes a deformable thin-film member having an opening, an electromechanical conversion element disposed at a periphery of the opening of the deformable thin-film member, an insulating film covering the electromechanical conversion element, a protective film over a surface of the insulating film, the protective film covering the surface of the insulating film and a surface of an electrode wiring connected to the electromechanical conversion element, and an adhesion improving film disposed between the electrode wiring and the protective film.

In example implementations, a printhead die is provided. The printhead die includes a substrate, a chamber layer formed on the substrate, a plurality of printing fluid ejection chambers coupled to opposite sides of the chamber layer and along a length of the chamber layer, and a top hat layer formed on the chamber layer and the plurality of printing fluid ejection chambers. The chamber layer includes a void to store printing fluid. The top hat layer includes an initial unsupported top hat layer portion over the void, wherein the initial unsupported top hat layer portion comprises a first end that is narrower than a second end.

An electric current based on electric charge produced on the piezoelectric body changes by going through a first path, a second path, a third path, and a fourth path in this order. On the first path, the electric current becomes larger as the voltage becomes higher. On the second path, the electric current becomes smaller as the voltage becomes higher. On the third path, the electric current becomes larger as the voltage becomes higher. On the fourth path, the electric current becomes smaller as the voltage becomes higher.

In some examples, a print bar fabrication method comprises placing printhead dies face down on a carrier, placing a printed circuit board on the carrier, wire bonding each printhead die of the printhead dies to the printed circuit board, and overmolding the printhead dies and the printed circuit board on the carrier, including fully encapsulating the wire bonds.

A microfluidic device has a chamber; a fluidic access channel in fluidic connection with the chamber; a plurality of nozzle apertures in fluidic connection with the chamber; and an actuator, operatively coupled to the fluid containment chamber and configured to cause ejection of drops of fluid through the nozzle apertures in an operating condition of the microfluidic device. The chamber has an elongated shape, with a length and a maximum width, wherein an aspect ratio between the length and the maximum width of the chamber is at least 3:1. The nozzle apertures are configured to generate, in use, a plurality of drops having a total drop volume, wherein a ratio total drop volume to a chamber volume is at least 15%.

A substrate includes a first substrate which has a first substrate through hole, and a second substrate which has a second substrate through hole and directly or indirectly overlaps the first substrate, the first substrate through hole and the second substrate through hole directly or indirectly communicate with each other to form a liquid supply path and a width D1 of an opening portion of the first substrate through hole on a surface of the first substrate closer to the second substrate, a width D2 of an opening portion of the second substrate through hole on a surface of the second substrate closer to the first substrate, a width D3 of an opening portion of the second substrate through hole on a surface of the second substrate farther from the first substrate have a relationship of D1<D2 and D3<D2.

Provided are a liquid jetting structure and its applications. The liquid jetting structure includes: a nozzle substrate on which a nozzle for jetting a liquid is formed; and a flow passage substrate on which a liquid flow passage communicating with the nozzle is formed, in which a first layer, a second layer, and a liquid-repellent layer are provided in this order on a jetting surface of the nozzle substrate, the first layer and the second layer are provided in this order on an inner wall of the liquid flow passage, the first layer is a layer containing at least one selected from the group consisting of tantalum oxide, zirconium oxide, titanium oxide, and hafnium oxide, and the second layer is a layer containing at least one selected from the group consisting of SiO.sub.2, SiC, SiN, SiCN, and SiON.