A printing pad (2) having a double structure comprising a roughly quadrangular pyramid-shaped elastic body (2a) and a coating layer (2d) which covers a definite range of a side face (2b) including an apex (2c) of the elastic body (2a), wherein said elastic body (2a) and the coating layer (2d) contain a silicone oil to ensure ink transfer (receiving and delivering) and impart elasticity (flexibility), and the coating layer (2d) is made harder (i.e., containing the silicone oil in a smaller amount) than the elastic body (2a).

An image transfer product is provided which includes a phase change material in one or more layers of the product to regulate the temperature of the product during printing operations. The image transfer product may be in the form of a printing blanket, printing sleeve, electrophotographic/xerographic transfer blanket, image transfer belt, or roller which includes a print surface layer and at least one layer underlying the printing surface layer. The phase change material may be included in any of the layers of the image transfer product, but is not present at the upper surface of the print surface layer. The phase change material may be in the form of a powder, fibers, capsules, or combinations thereof.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Disclosed herein are sacrificial coating compositions comprising at least one hydrophilic polymer; at least one hygroscopic agent; at least one surfactant; at least one non-reactive silicone release agent; and water. In certain embodiments, the at least one non-reactive silicone release agent is chosen from polyether modified polysiloxane and nonreactive silicone glycol copolymers. In certain embodiments, the at least one non-reactive silicone release agent may be present in an amount ranging from about 0.001% to about 2%, based on the total weight of the composition, such as from about 0.03% to about 0.06%. Also disclosed herein is a blanket material suitable for transfix printing comprising a sacrificial coating composition, as well as an indirect printing process comprising a step of applying a sacrificial coating composition to a blanket material.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Provided herein is an imaging blanket for variable data lithography comprising (i) a substrate and (ii) a thermally-conductive composition disposed on the substrate comprising a silicone elastomer and a thermally-conductive filler selected from metal oxides, wherein the thermally-conductive composition has a thermal conductivity ranging from about 0.6 W/m.sup.2 to about 1.6 W/m.sup.2. Further provided herein a method of making the imaging blanket, as well as a printing system comprising the imaging blanket, wherein the imaging blanket has improved thermal conductivity.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

The present invention provides a lithographic printing plate precursor including at least a heat-sensitive layer and an ink repellent layer disposed on a substrate, the rate of gas generation therefrom being 6.510.sup.5 g/m.sup.3 to 12.510.sup.5 g/m.sup.3 as determined by GC-MS analysis in which the lithographic printing plate precursor is heated in a nitrogen stream at 450 C. for 5 minutes, and also provides a method for producing a lithographic printing plate and a method for producing printed matter therefrom.

An imaging blanket for variable data lithography. The imaging blanket comprises a substrate. A foam layer is disposed on the substrate. An elastomeric layer is disposed on the foam layer, the elastomeric layer comprising a silicone elastomer. The elastomeric layer has a Shore A hardness ranging from about 50 Shore A to about 100 Shore A.