Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide.

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide.

A non-electrical battery can include a backing plate; a plurality of strings disposed in parallel relation on the backing plate, each string comprising a first end and a second end, wherein the first end of each string is attached to the backing plate and each string extends away from the backing plate; and a charging mechanism attached to the second end of each string to apply a force to the strings to increase a potential energy stored by the strings.

In some embodiments, a sensor includes a microelectromechanical system (MEMS) structure, a cover, and a bump stop. The MEMS structure is configured to move responsive to electromechanical stimuli. The cover is positioned on the MEMS structure. The cover is configured to mechanically protect the MEMS structure. The bump stop is disposed on a substrate and the bump stop is configured to stop the MEMS structure from moving beyond a certain point. The bump stop is further configured to stop the MEMS structure from making physical contact with the substrate. Moreover, the cover is configured to apply a force to the MEMS structure responsive to a voltage being applied to the cover.

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide.

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V.sub.Si.sup. monovacancy defect in silicon carbide.

The present invention relates to a method of actuating a shape changeable member of actuatable material. The invention further relates to a shape changeable member and to a system comprising such a shape changeable member and a magnetic field apparatus.

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V.sub.Si monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V.sub.Si monovacancy defect in silicon carbide.

The present disclosure discloses a micro-nuclear battery. The micro-nuclear battery comprises a base frame comprising a bottom, a top and a side wall; a cantilever structure having a free end hung in the air and a fixed end fixed to the side wall of the base frame and provided with a piezoelectric component thereon; and a radiation unit comprising an upper radioactive source and a lower radioactive source configured to emit electrons to the free end and respectively arranged at positions in inner surfaces on the top and the bottom of the base frame corresponding to the free end of the cantilever structure, wherein a width of the free end is greater than a width of the fixed end.

A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.