The present disclosure relates to a spatio-temporal stimulus responsive foldable structure. The structure may have a substrate having at least a region formed to provide engineered weakness to help facilitate bending or folding of the substrate about the region of engineered weakness. The substrate is formed to have a first shape. A stimulus responsive polymer (SRP) flexure is disposed at the region of engineered weakness. The SRP flexure is responsive to a predetermined stimulus actuation signal to bend or fold in response to exposure to the stimulus actuation signal, to cause the substrate to assume a second shape different from the first shape.

The present disclosure relates to a spatio-temporal stimulus responsive foldable structure. The structure may have a substrate having at least a region formed to provide engineered weakness to help facilitate bending or folding of the substrate about the region of engineered weakness. The substrate is formed to have a first shape. A stimulus responsive polymer (SRP) flexure is disposed at the region of engineered weakness. The SRP flexure is responsive to a predetermined stimulus actuation signal to bend or fold in response to exposure to the stimulus actuation signal, to cause the substrate to assume a second shape different from the first shape.

The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.

A method of characterizing frequency fluctuations of a resonator comprising the steps of: a) driving the resonator, in a linear regime, by simultaneously applying two periodical driving signals having respective frequencies, the frequencies being different from each other and from a resonant frequency of the resonator, but contained within a resonance linewidth thereof; b) performing simultaneous measurements of response signal of the resonator at the frequencies of the periodical driving signal; and c) computing a value representative of a correlation between the measurements, the value being indicative of frequency fluctuations of the resonator. An apparatus for implementing such a method is provided.

A hearing aid has an input transducer, a signal processing device and an output transducer. Furthermore, the hearing aid has an inductive receiver, wherein the inductive receiver contains a tunnel magnetoresistance (TMR) sensor. The inductive receiver is configured to receive audio signals of an inductive hearing system. A DC voltage converter is disposed upstream of the TMR sensor, and the DC voltage converter is upstream of the input transducer.

A hearing aid has an input transducer, a signal processing device and an output transducer. Furthermore, the hearing aid has an inductive receiver, wherein the inductive receiver contains a tunnel magnetoresistance (TMR) sensor. The inductive receiver is configured to receive audio signals of an inductive hearing system. A DC voltage converter is disposed upstream of the TMR sensor, and the DC voltage converter is upstream of the input transducer.

A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

The present invention relates to a method of actuating a shape changeable member of actuatable material. The invention further relates to a shape changeable member and to a system comprising such a shape changeable member and a magnetic field apparatus.

A method for manufacturing a MEMS element, including the following: forming a least one stationary weight element and at least one moving weight element in the MEMS element, and positioning at least one fixing element at the stationary weight element and at the moving weight element, the fixing element being formed so as to be able to be severed.