Described examples include an apparatus having a substrate with a substrate surface. The apparatus also includes an element with a planar surface facing the substrate surface and with a nonplanar surface opposite the planar surface facing away from the substrate surface.

A stacked structure includes a polymer layer and a metal layer. The metal layer is disposed on the polymer layer. A burr length on a surface of the polymer layer is about 0.8 m to about 150 m, and a burr length on a surface of the metal layer is about 0.8 m to about 7 m.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

A manufacturing method of micro channel structure is disclosed and includes steps of: providing a substrate; depositing and etching to form a first insulation layer; depositing and etching to form a supporting layer; depositing and etching to form a valve layer; depositing and etching to form a second insulation layer; depositing and etching to form a vibration layer, a lower electrode layer and a piezoelectric actuating layer; providing a photoresist layer and depositing and etching to form a plurality of bonding pads; depositing and etching to from a mask layer; etching to form a first chamber; and etching to form a second chamber.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

A method of manufacturing a patterned aluminum nitride layer includes growing an amorphous patterned layer on a seed layer, which promotes growth of a first type aluminum nitride layer that has a disordered crystallographic structure. The seed layer promotes growth of a second type aluminum nitride layer with a vertically oriented columnar crystal structure. The method also includes depositing an aluminum nitride layer over the amorphous patterned layer and the seed layer to form the first type aluminum nitride layer with the disordered crystallographic structure over the amorphous patterned layer and the second type aluminum nitride layer with the vertically oriented columnar crystal structure over the seed layer. The method also includes depositing a masking layer over the second type aluminum nitride layer and etching away the first type aluminum nitride layer.

A manufacturing method of micro channel structure is disclosed and includes steps of: providing a substrate; depositing and etching to form a first insulation layer; depositing and etching to form a supporting layer; depositing and etching to form a valve layer; depositing and etching to form a second insulation layer; depositing and etching to form a vibration layer, a lower electrode layer and a piezoelectric actuating layer; providing a photoresist layer and depositing and etching to form a plurality of bonding pads; depositing and etching to from a mask layer; etching to form a first chamber; and etching to form a second chamber.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.