A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

A semiconductor wafer has formed within it a plurality of piston tops of equal area. Each of the piston tops includes a thin flat region from which a majority of the thickness of the original semiconductor wafer may have been removed. A first one of the piston tops has a lower thickness than a second one of the piston tops. The second piston top has at least one hole in it, the volume of the hole corresponding to the difference in thickness between the first and second piston tops, such that the masses of the first and second piston tops differ by less than the variation in thickness between them.

A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.

A method for manufacturing an electromechanical actuator includes providing a primary stack of layers comprising a monocrystalline layer, providing a secondary stack of layers, and forming, in the etching layer, at least three pads. The method further includes encapsulating the three pads by a first encapsulation layer, assembling the primary stack of layers with the secondary stack of layers, removing the first substrate, and forming a movable electrode in the monocrystalline layer.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A process for fabricating a device for detecting electromagnetic radiation includes the step of providing a detecting element suspended by a supporting pillar. The pillar has a lateral through-aperture formed via a local break in the continuity of a layer of interest, because of the presence of a jut in a vertical orifice.

The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

A construction method for 3D micro/nanostructure, comprising: Step (1), fixing and vacuuming a material source on a substrate; Step (2), focusing an electron beam to ensure that a position of a focus is 0-100 nm away from a surface of material source, and an interface local domain including the focus of electron beam and surface atoms is formed; and Step (3), controlling the focus of electron beam to move point by point according to a shape of a designed 3D micro/nanostructure, and realizing the construction of 3D micro/nanostructure. This disclosure realizes real-time construction of 3D micro/nanostructure through the migration of atoms driven by uneven atomic density and electric potential difference in interface local domain. This disclosure promotes integrative development of nanotechnology and 3D printing and has good value of application and promotion.