Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

A method for manufacturing semiconductor structure includes: providing a substrate having a first surface; forming a trench on the first surface, wherein a bottom surface and side walls of the substrate are configured along an outer periphery of the trench; annealing the substrate with high-purity argon or high-purity hydrogen to flatten the bottom surface and the side walls; conformally disposing a composite-material layer to cover the first surface, the bottom surface and the side walls; disposing a polysilicon material layer in the trench; removing the composite-material layer on the first surface; forming a multi-layer metal interconnection structure on the first surface and the polysilicon material layer, the multi-layer metal interconnection structure including a MEMS frame structure and through holes; removing the polysilicon material layer and the composite-material layer; using plasma treatment to the trench to flatten the bottom surface and the side walls. The plasma contains inert gas and hydrogen.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A method for manufacturing semiconductor structure includes: providing a substrate having a first surface; forming a trench on the first surface, wherein a bottom surface and side walls of the substrate are configured along an outer periphery of the trench; annealing the substrate with high-purity argon or high-purity hydrogen to flatten the bottom surface and the side walls; conformally disposing a composite-material layer to cover the first surface, the bottom surface and the side walls; disposing a polysilicon material layer in the trench; removing the composite-material layer on the first surface; forming a multi-layer metal interconnection structure on the first surface and the polysilicon material layer, the multi-layer metal interconnection structure including a MEMS frame structure and through holes; removing the polysilicon material layer and the composite-material layer; using plasma treatment to the trench to flatten the bottom surface and the side walls. The plasma contains inert gas and hydrogen.

A process for forming inkjet nozzle devices on a frontside surface of a wafer substrate. The process includes the steps of: (i) providing the wafer substrate having a plurality of etched holes defined in the frontside surface, each etched hole being filled with first and second polymers such that the second polymer is coplanar with the frontside surface; (ii) forming the inkjet nozzle devices on the frontside surface using MEMS fabrication steps; and (iii) removing the first and second polymers via oxidative ashing, wherein first and second polymers are different.

A planarization structure is formed with a planar upper face enclosing a relief projecting from a planar substrate. The process used deposits a layer of a first material over the reliefs and then forms a layer of a second material with a planar upper face. This second material may be etched selectively with respect to the first material. The second layer is processed so that the protuberances of the first material are uncovered. A planarizing is then performed on the first material as far as the layer of the second material by selective chemical-mechanical polishing with respect to the second material.

A process for forming inkjet nozzle devices on a frontside surface of a wafer substrate. The process includes the steps of: (i) providing the wafer substrate having a plurality of etched holes defined in the frontside surface, each etched hole being filled with first and second polymers such that the second polymer is coplanar with the frontside surface; (ii) forming the inkjet nozzle devices on the frontside surface using MEMS fabrication steps; and (iii) removing the first and second polymers via oxidative ashing, wherein first and second polymers are different.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.