Microelectromechanical system (MEMS) devices, methods of operating the MEMS device, and methods of manufacturing the MEMS device are disclosed. In some embodiments, the MEMS device includes a glass substrate; an electrode on the glass substrate; a hinge mechanically coupled to the electrode; a membrane mirror mechanically coupled to the hinge; a TFT on the glass substrate and electrically coupled to the electrode; and a control circuit comprising: a multiplexer configured to turn on or turn off the TFT; and a drive source configured to provide a drive signal for charging the electrode through the TFT. An amplitude of the drive signal corresponds to an amount of charge, and the amount of charge generates an electrostatic force for actuating the hinge and a portion of the membrane mirror mechanically coupled to the hinge. In some embodiments, the MEMS devices comprise a charge transfer circuit for providing the amount of charge.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

One or more methods of fabricating a microscale canopy wick structure having an array of individual wicks having one or more canopy members. Each method includes selectively etching a substrate to control the thickness of the canopy members and also control the width of a fluid flow channel between adjacent wicks in a manner that enhances the overall performance of the microscale canopy wick structure.

A method for manufacturing a millimeter scale electromechanical device includes coupling a stainless steel ply to a polymer carrier ply, coating the stainless steel ply in a photo resist material, masking the photoresist material, exposing the photoresist material to cure a portion of the photoresist material, developing the photoresist material to remove uncured photoresist material from the stainless steel ply, chemically etching the stainless steel ply to remove a patterned portion of the stainless steel ply, dissolving the polymer carrier ply to release unwanted chips of the stainless steel ply, and adhering the patterned stainless steel ply to a flexible material ply to form a sub-laminate.

One or more methods of fabricating a microscale canopy wick structure having an array of individual wicks having one or more canopy members. Each method includes selectively etching a substrate to control the thickness of the canopy members and also control the width of a fluid flow channel between adjacent wicks in a manner that enhances the overall performance of the microscale canopy wick structure.

A method for manufacturing a millimeter scale electromechanical device includes coupling a stainless steel ply to a polymer carrier ply, coating the stainless steel ply in a photo resist material, masking the photoresist material, exposing the photoresist material to cure a portion of the photoresist material, developing the photoresist material to remove uncured photoresist material from the stainless steel ply, chemically etching the stainless steel ply to remove a patterned portion of the stainless steel ply, dissolving the polymer carrier ply to release unwanted chips of the stainless steel ply, and adhering the patterned stainless steel ply to a flexible material ply to form a sub-laminate.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first electrode, forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and a second electrode, and the first cantilevered electrode includes an arm with an extending protrusion which extends upward from an upper surface of the arm.

A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.