A method comprising providing a carbonaceous material, the substrate having a first thermal conductivity. The method further comprises depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30. The method further comprises depositing a second masking layer on the first masking layer to form an etch mask, and etching an exposed portion of the substrate.

A method for providing a plurality of hermetically sealed packages, including the steps of: providing at least two substrates including a first substrate and a second substrate, at least one of the at least two substrates being a transparent substrate, the two substrates being arranged directly adjoining each other or on top of one another, the transparent substrate defining a circumferential rim and an upper side of each package, the bottom of the package being defined by the second substrate, a respective contact area being defined at contact surfaces between the two substrates; sealing each functional area in a hermetically tight manner by bonding the two substrates along the contact area of each package; and dicing each package by a cutting step or a separating step, a particle jet being used to abrasively remove a material from the transparent substrate by the particle jet.

A microstructure and a method for manufacturing the same includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.

The present disclosure provides a method of fabricating a diamond membrane. The method comprises providing a substrate and a support structure. The substrate comprises a diamond material having a first surface and the substrate further comprises a sub-surface layer that is positioned below the first surface and has a crystallographic structure that is different to that of the diamond material. The sub-surface layer is positioned to divide the diamond material into first and second regions wherein the first region is positioned between the first surface and the sub-surface layer. The support structure also comprises a diamond material and is connected to, and covers a portion of, the first surface of the substrate. The method further comprises selectively removing the second region of the diamond material from the substrate by etching away at least a portion of the sub-surface layer of the substrate.

A method for producing microstructures includes introducing modifications by a laser beam into a volume between two opposite outer surfaces of a glass substrate. An etching method is carried out which provides anisotropic material removal in one of the outer surfaces so as to produce recesses that have a conical shape. A layer that is resistant to an etching effect of the etching method is applied as a cover layer to only one outer surface. Then, a further etching method is carried out so that material is removed in the other outer surface until recesses of this other outer surface, which are produced and/or enlarged by the further etching method, have reached the cover layer.

A method for forming a biological microdevice includes applying a biocompatible coarse scale additive process with an additive device and a biocompatible material to form an object. The coarse scale is a dimension not less than about 100 μm. The method also includes applying a biocompatible fine scale subtractive process with a subtractive device to the object. The fine scale is a dimension not greater than about 1000 μm. The method also includes moving the object between the additive device and the subtractive device. A system is also provided for performing the above method and includes the additive device, the subtractive device, a means for transporting the object between the additive device and subtractive device and a processor with a memory including instructions to perform one or more of the above method steps.

Provided are a hole forming method and a hole forming apparatus capable of stably forming a single nanopore on a membrane. This hole forming method is a hole forming method for forming a hole in a film and includes: a first step of applying a first voltage between a first electrode and a second electrode, installed so as to sandwich the film provided in an electrolyte, and stopping the application of the first voltage when a current flowing between the first electrode and the second electrode reaches a first threshold current so as to form a thin film portion in a part of the film; and a second step of applying a second voltage between the first electrode and the second electrode after the first step so as to form a nanopore in the thin film portion.

Provided is a technique for stably forming a single nanopore by dielectric breakdown for a membrane having a high dielectric breakdown withstand voltage. In the nanopore forming method of the present disclosure, a SiNx film is placed between the first aqueous solution and the second aqueous solution, the first electrode is brought into contact with the first aqueous solution, and the second electrode is brought into contact with the second aqueous solution, and a voltage is applied to the first electrode and the second electrode. The SiNx film has a composition ratio of 1<x<4/3. At least any one of the first aqueous solution and the second aqueous solution has the pH of 10 or more.

A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.