Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

Single atom nanozymes and associated immunoassays, method of making, and method of using such immunoassays are described herein. For example, a method of making a single atom nanozyme includes forming a soft template having multiple nanoscale structures in an aqueous solution and adding a monomer and a metal containing salt into the aqueous solution. The metal containing salt causes polymerization of the monomer to form multiple nanostructures according to the nanoscale structures of the soft template. The method also includes coating the individual formed nanostructures with a confinement layer in the aqueous solution before pyrolyzing. During pyrolysis, the confinement layer at least restricts or completely prevents migration of atoms on the external surface of the individual nanostructures.

A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

Provided herein is a method, including creating a first layer over a substrate, wherein the first layer is configured for directed self-assembly of a block copolymer thereover; creating a continuous second layer over the first layer by directed self-assembly of a block copolymer, wherein the second layer is also configured for directed self-assembly of a block copolymer thereover; and creating a third layer over the continuous second layer by directed self-assembly of a block copolymer. Also provided is an apparatus, comprising a continuous first layer comprising a thin film of a first, phase-separated block copolymer, wherein the first layer comprises a first chemoepitaxial template configured for directed self-assembly of a block copolymer thereon; and a second layer on the first layer, wherein the second layer comprises a thin film of a second, phase-separated block copolymer.

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.