Patent classifications
B81C2201/0157
SYSTEMS AND METHODS FOR SILICON MICROSTRUCTURES FABRICATED VIA GREYSCALE DRIE WITH SOI RELEASE
The present disclosure relates to a method for at least one of forming a part or modifying a part, and a system therefor. The method involves initially providing a planar structure having a first material layer disposed on a second material layer. A lithographic operation including greyscale printing is performed to produce a resist material layer on the first material layer, with the resist material layer having a predetermined three-dimensional pattern extending along X, Y and Z axes, with features helping to define the three-dimensional pattern having differing dimensions along the Z axis, and which acts as a mask. An etch process is then performed, using the mask provided by the resist material layer, to etch the first material layer to impart the pattern of the mask as an etched pattern into the first material layer in accordance with a predetermined selectivity etching ratio, such that the etched pattern in the first material layer includes features formed with greater dimensions than corresponding features in the mask of the resist material layer.
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.
Gradient Structures Interfacing Microfluidics and Nanofluidics, Methods for Fabrication and Uses Thereof
A fluidic chip includes at least one nanochannel array, the nanochannel array including a surface having a nanofluidic area formed in the material of the surface; a microfluidic area on said surface; a gradient interface area having a gradual elevation of height linking the microfluidic area and the nanofluidic area; and a sample reservoir capable of receiving a fluid in fluid communication with the microfluidic area. In another embodiment, a fluidic chip includes at least one nanochannel array, the nanochannel array includes a surface having a nanofluidic area formed in the material of the surface; a microfluidic area on said surface; and a gradient interface area linking the microfluidic area and the nanofluidic area, where the gradient interface area comprises a plurality of gradient structures, and the lateral spacing distance between said gradient structures decreases towards said nanofluidic area; and a sample reservoir capable of receiving a fluid in fluid communication with the microfluidic area.
Contoured electrode for capacitive micromachined ultrasonic transducer
Aspects of this disclosure relate to a capacitive micromachined ultrasonic transducer (CMUT) with a contoured electrode. In certain embodiments, the CMUT has a contoured electrode. The electrode may be non-planar to correspond to a deflected shape of the outer plate. A change in distance between the electrode and the plate after deflection may be greater than a minimum threshold across the width of the CMUT.
Gradient structures interfacing microfluidics and nanofluidics, methods for fabrication and uses thereof
The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Localized functionalization of nanotextured surfaces
A material with a nanotexture comprising structures extending from a substrate. The structures are modified by coating the nanotexture with a protective coating and partially removing the coating, exposing a portion of the structure for functionalization.
PULSE TRAIN EXCITATION FOR CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER
Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.
Pulse train excitation for capacitive micromachined ultrasonic transducer
Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.
Pulse train excitation for capacative micromachined ultrasonic transducer
Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.
SURFACE MICROMACHINED STRUCTURES
In one example, a method comprises forming a first layer on a substrate surface, forming an opening in the first layer, forming a second layer on the first layer and in the opening, and forming a photoresist layer on the second layer, in which the photoresist layer has a first curved surface over a first part of the first layer and over the opening. The method further comprises etching the photoresist layer and a second part of the second layer over the first part of the first layer to form a second curved surface on the second part of the second layer, and forming a mirror element and a support structure in the second layer, including by etching a third part of the second layer and removing the first layer.