Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill later is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

A method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprises: a) the supply of the donor substrate and the receiver substrate, b) the formation in the donor substrate of an embrittlement zone delimiting the layer to transfer, c) the bonding of the donor substrate on the receiver substrate, the surface of the donor substrate opposite to the embrittlement zone with respect to the layer to transfer being at the bonding interface, and d) the detachment of the donor substrate along the embrittlement zone. A step of controlled modification of the curvature of the donor substrate and/or the receiver substrate is performed before the bonding step.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

A method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprises: a) the supply of the donor substrate and the receiver substrate, b) the formation in the donor substrate of an embrittlement zone delimiting the layer to transfer, c) the bonding of the donor substrate on the receiver substrate, the surface of the donor substrate opposite to the embrittlement zone with respect to the layer to transfer being at the bonding interface, and d) the detachment of the donor substrate along the embrittlement zone. A step of controlled modification of the curvature of the donor substrate and/or the receiver substrate is performed before the bonding step.

A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

A method of transferring graphene onto a target substrate having cavities and/or holes or onto a substrate having at least one water soluble layer is disclosed. It comprises the steps of: applying a protective layer (4) onto a sample comprising a stack (20) formed by a graphene monolayer (2) grown on a metal foil or on a metal thin film on a silicon substrate (1); attaching to said protective layer (4) a frame (5) comprising at least one outer border and at least one inner border, said frame (5) comprising a substrate and a thermal release adhesive polymer layer, the frame (5) providing integrity and allowing the handling of said sample; removing or detaching said metal foil or metal thin film on a silicon substrate (1); once the metal foil or metal thin film on a silicon substrate (1) has been removed or detached, drying the sample; depositing the sample onto a substrate (7); removing said frame (5) by cutting through said protective layer (4) at said at least one inner border of the frame (5) or by thermal release.

A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.