An example method of producing a microelectromechanical system (MEMS) package, the method comprising: applying first epoxy layers to a first substrate, at least one of the first epoxy layers coupled to a second substrate; applying a first post gel heat treatment to the first epoxy layers; after applying the first post gel heat treatment to the first epoxy layers, applying second epoxy layers to the second substrate and to the first epoxy layers; and applying a second post gel heat treatment to the first epoxy layers and the second epoxy layers.

A method for producing damper structures on a micromechanical wafer. The method includes: providing an at least partially UV-transparent master mold for molding damper structures; inserting and pressing a micromechanical wafer into the master mold so that micromechanical structures in the wafer are aligned in relation to the damper structures; filling the master mold with UV-curing LSR and subsequent UV irradiation; and mold release and removal of the connected structure of the micromechanical wafer with attached dampers. A method for producing a singulated MEMS chip comprising a UV-cured damper is also described.

Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.

A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

An electronic integrated circuit (IC) component is mounted to a substrate. A cap member is applied onto the substrate and covers the electronic IC component. The cap member includes an outer wall defining an opening and an inner wall surrounding the electronic IC component. The inner wall extends from a proximal end at the substrate towards a distal end facing the opening in the outer wall to provide a reception chamber for the electronic IC component and a peripheral chamber between the inner wall and the outer wall of the cap member. An encapsulant material is provided in the reception chamber to seal the electronic IC component without being present in the peripheral chamber.

A method for producing damper structures on a micromechanical wafer. The method includes: providing an at least partially UV-transparent master mold for molding damper structures; inserting and pressing a micromechanical wafer into the master mold so that micromechanical structures in the wafer are aligned in relation to the damper structures; filling the master mold with UV-curing LSR and subsequent UV irradiation; and mold release and removal of the connected structure of the micromechanical wafer with attached dampers. A method for producing a singulated MEMS chip comprising a UV-cured damper is also described.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

An electronic integrated circuit (IC) component is mounted to a substrate. A cap member is applied onto the substrate and covers the electronic IC component. The cap member includes an outer wall defining an opening and an inner wall surrounding the electronic IC component. The inner wall extends from a proximal end at the substrate towards a distal end facing the opening in the outer wall to provide a reception chamber for the electronic IC component and a peripheral chamber between the inner wall and the outer wall of the cap member. An encapsulant material is provided in the reception chamber to seal the electronic IC component without being present in the peripheral chamber.