A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A method for producing a first and second micromirror device. A silicon oxide layer is applied to at least the front side of a silicon wafer. The silicon oxide layer is removed so that a first and second separation region of the silicon oxide layer are generated, which are arranged spatially separated from each other along a separation plane. A silicon layer is applied to the front side of the silicon wafer and to the silicon oxide layer. An etching mask is applied to the rear side of the silicon wafer, the etching mask having a first opening along the separation plane of the first and second separation region. The silicon layer and the silicon wafer are removed, according to the etching mask on the rear side of the silicon wafer and according to the silicon oxide layer of the first and second separation region.

Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

A sensing element having improved temperature and pressure characteristics including at least one acoustic sensing device formed mainly from a silicon substrate and having a microelectromechanical system without the use of quartz or polymer, wherein the at least one acoustic sensing device detects a torque associated with a metal object subject to said torque, and a high temperature bonding surface for directly connecting the sensing element to the metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing, without the need for a polymer adhesive. Related sensors using such sensing elements and methods are also disclosed herein.

Providing a microchip that effectively suppresses the peeling of a bonded substrate that has been bonded together and that is unlikely to leak liquid. A microchip includes: a bonded substrate that includes a plurality of substrates, each of the substrates having a main surface and a side surface, the main surfaces being bonded each other; and a microchannel located inside the bonded substrate. The substrates include a first substrate with a large thickness and a remaining substrate with a smaller thickness than the first substrate. At least the first substrate has a side surface having a gradient and extending to an outermost side of the bonded substrate when one end of the bonded substrate is viewed from a direction parallel to the main surface.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

The invention relates to a method for producing optical components, wherein a first contact surface is formed by bringing a deformation element into contact with a carrier; and a second contact surface is formed by applying a functional element to the deformation element; said second contact surface at least partially overlapping the first contact surface, so that a deformation zone is formed by the area of the deformation element that lies between the overlapping areas of the two contact surfaces, wherein at least one portion of the deformation zone is heated and deformed in such a way that the functional element is deflected, in particular, shifts and/or tilts, and the functional element is joined with the deformation element during the process step of applying the functional element to the deformation element and/or during the process step of heating and deforming the deformation zone.