The radiation detector (10) comprises a scintillator (15) having a first refractive index (n.sub.s) for converting incident radiation (RR) received at a first side (S1) of the radiation detector (10) into converted radiation (CR), a photosensor (20) for receiving the converted radiation (CR) from the scintillator (15), and an optical coating layer (25) arranged between the scintillator (15) and the photosensor (20). The scintillator (15) has regions (RR) arranged for being imaged, when impinged by the incident radiation (RR), onto corresponding regions of the photosensor (20). The optical coating layer (25) has a second refractive index (n.sub.o) lower than the first refractive index (n.sub.s) for reflecting the converted radiation (CR) resulting from the incident radiation (RR) impinged on a particular region (A1) of the scintillator (15) and received by a region (A3) of the optical coating layer (25) corresponding to a photosensor region different from the imaged one (A2).

Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.

The present invention relates to a gas sensor and a manufacturing method thereof. A sensor body of the gas sensor is formed by cutting a multi-layered ceramic/metal platform where a plurality of sequential layer structures of a ceramic dielectric material and metal are layered in a layering direction. The sensor body includes at least one layered body wherein a ceramic dielectric material, a first internal electrode, a ceramic dielectric material, and a second internal electrode are sequentially layered. The first internal electrode and the second internal electrode are exposed through a cut surface by cutting. The first internal electrode is electrically connected to a first electrode terminal disposed on a first side of the sensor body, and the second internal electrode is electrically connected to a second electrode terminal disposed on a second side of the sensor body facing the first side. The first and the second internal electrode are exposed to form a sensing surface on at least one side of the sensor body excluding a side where the first and the second electrode terminal are installed. A gas sensing material layer for gas detection is formed on a portion or an entire upper portion of the sensing surface, or a metal film whose contact resistance with the gas sensing material layer is lower than the first and the second internal electrode is formed on upper portions of the first and the second internal electrode which are exposed and a gas sensing material layer for gas detection is formed on a portion or an entire upper portion of the sensing surface where the metal film is formed.

Nano-electromechanical systems (NEMS) sensor devices that utilize thin electrically conductive membranes, which can be, for example, graphene membranes. The NEMS devices can have a trough shape (such as a serpentine shape arrangement) of the electrically conductive membrane. The thin, electrically conductive membrane has membrane-structures disposed upon it in an array of cavities. These membrane structures are between the thin, electrically conductive membrane and the main membrane trace. Such an arrangement increases the sensitivity of the NEMS sensor device. The electrically conductive membrane can be controllably wicked down on the edge of the oxide cavity to increase the sensitivity of the NEMS sensor device. Such NEMS sensor devices include NEMS sensor devices that are well suited to applications that measure magnetic fields that, operate below 10 kHz, such as brain-computer interfaces.

A nanostructured article includes a substrate; a plurality of first nanostructures disposed on, and extending away from, the substrate; and a covalently crosslinked fluorinated polymeric layer disposed on the plurality of first nanostructures. The plurality of first nanostructures includes polyurethane. The polymeric layer at least partially fills spaces between the first nanostructures to an average minimum height above the substrate of at least 30 nm such that the polymeric layer has a nanostructured surface defined by, and facing away from, the plurality of first nanostructures.

Provided is a fibrous carbon nanostructure dispersion liquid having excellent fibrous carbon nanostructure dispersibility. The fibrous carbon nanostructure dispersion liquid contains a solvent and one or more fibrous carbon nanostructures having a percentage mass loss of 3.0 mass % or less upon heating from 23° C. to 200° C. at a heating rate of 20° C./min in a nitrogen atmosphere as measured by thermogravimetric analysis.

Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.

Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.

A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1
X.sub.2[A.sub.(n−1)M.sub.nO.sub.(3n+1)]  Chemical Formula 1
wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.