A quantum dot, a light emitting material, and a manufacturing method of quantum dot are provided. A ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×10.sup.8 CPS/Abs. to 2.0×10.sup.9 CPS/Abs. The characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot.

A method to remove selected parts of a thin-film material otherwise uniformly deposited over a template is disclosed. The methods rely on a suitable potting material to encapsulate and snatch the deposited material on apexes of the template. The process may yield one and/or two devices during a single process step: (i) thin-film material(s) with micro- and/or nano-perforations defined by the shape of template apexes, and (ii) micro- and/or nano-particles shaped and positioned in the potting material by the design of the template apexes. The devices made from this method may find applications in fabrication of mechanical, chemical, electrical and optical devices.

Graphene-carbon nanotube multi-stack three-dimensional architectures (graphene-CNT stacks) are formed by a “popcorn-like” growth method, in which carbon nanotubes are grown throughout the architecture in a continuous step. Alternating layers of graphene and a transition metal are grown by a vapor deposition process. The metal is fragmented and etched to form an array of catalytic sites. Carbon nanotubes grow from the catalytic sites in a vapor-solid-liquid process. The graphene-CNT stacks have applications in electrical energy storage devices, such as supercapacitors and batteries. The directly grown carbon nanotube array between graphene layers provides ease of ion diffusion and electron transfer, in addition to being an active material, spacer and electron pathway.

Graphene material-metal nanocomposites having a metal core with one or more graphene material layers disposed on the metal core. The nanocomposites may be formed by contacting metal nanowires and one or more graphene material and/or graphene material precursor in a dispersion. The nanocomposites may be used for form inks for coating or printing conductive elements or as conductors in various articles of manufacture. An article of manufacture may be an electrical device or an electronic device.

Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and (111) plane preferential growth according to X-ray diffraction analysis.

A microrobot and manufacturing method thereof are provided. The microrobot includes a first block, a second block, and a third block connected with each other. The first block is disposed between the second block and the third block. The first block includes polydimethylsiloxane. The second block and the third block include a mixture, and the mixture includes polydimethylsiloxane and neodymium magnet particles. The manufacturing method of the microrobot includes the steps of providing a first acrylic mold with an accommodating space and a second acrylic mold with a U-shaped groove; injecting polydimethylsiloxane into the accommodating space; placing the second acrylic mold in the accommodating space; taking out the second acrylic mold and injecting the mixture into the accommodating space to obtain a microrobot. Placing the microrobot on an electromagnet platform can achieve an object of mixing and dissolving an embolism in a flow channel.

Systems, methods, and devices are disclosed for producing quantum particles (e.g., quantum dots) having a uniform size by vaporization of molten precursor droplets. More particularly, the present technology produces quantum dots by melting or liquefying solid and substantially pure precursor materials followed by production of uniformly sized droplets of molten precursor by use of a droplet maker into a microwave generated plasma torch.

Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and (111) plane preferential growth according to X-ray diffraction analysis.

Methods are disclosed for producing core-shell particles having a uniform size using a microwave plasma process. More particularly, methods of the present technology are used to manufacture core-shell particles having a core at least partially surrounded by a shell. The core and shell of the core-shell particles are chemically distinct. Methods of the present technology occur within a plasma chamber of a microwave plasma reactor and a microwave formed plasma is utilized to vaporize core precursor material.

Methods are disclosed for producing product particles having a uniform size using a microwave plasma process. More particularly, methods of the present technology are used to manufacture product particles having a core at least partially surrounded by a shell. The core and shell of the product particles are chemically distinct. Methods of the present technology occur within a plasma chamber of a microwave plasma reactor and a microwave formed plasma is utilized to vaporize core precursor material.