The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo.sub.6Z.sub.8 (Z=sulfur) or Mo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y (Z.sup.1=sulfur; Z.sup.2=selenium), and partially cuprated Cu.sub.1Mo.sub.6S.sub.8 as well as partially de-cuprated Cu.sub.1-xMg.sub.xMo.sub.6S.sub.8 and the precursors have a general formula of M.sub.xMo.sub.6Z.sub.8 or M.sub.xMo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

A method for producing metal chalcogenide nanoparticles, the method comprising: (i) producing hydrogen chalcogenide-containing vapor from a microbial source, wherein said microbial source comprises: (a) chalcogen-reducing microbes capable of producing hydrogen chalcogenide vapor from a chalcogen-containing source; (b) a culture medium suitable for sustaining said chalcogen-reducing microbes; (c) at least one chalcogen-containing compound that can be converted to hydrogen chalcogenide vapor by said chalcogen-reducing microbes; and (d) at least one nutritive compound that provides donatable electrons to said chalcogen-reducing microbes during consumption of the nutritive compound by said chalcogen-reducing microbes; and (ii) directing said hydrogen chalcogenide-containing vapor into a metal-containing solution comprising a metal salt dissolved in a solvent to produce metal chalcogenide nanoparticles in said solution, wherein said chalcogen is sulfur or selenium, and said chalcogenide is sulfide or selenide, respectively. The invention is also directed to metal chalcogenide nanoparticle compositions produced as above and having distinctive properties.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

A quantum dot of the present invention is a nanocrystal represented by AgInE.sub.2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE.sub.2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element.

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo.sub.6Z.sub.8 (Z=sulfur) or Mo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y (Z.sup.1=sulfur; Z.sup.2=selenium), and partially cuprated Cu.sub.1Mo.sub.6S.sub.8 as well as partially de-cuprated Cu.sub.1-xMg.sub.xMo.sub.6S.sub.8 and the precursors have a general formula of M.sub.xMo.sub.6Z.sub.8 or M.sub.xMo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

This disclosure relates to the manufacture an alkali metal quaternary crystalline nanomaterial. an alkali metal quaternary crystalline nanomaterial having general Formula A (I.sub.2-II-IV-VI.sub.4); and wherein I is sodium (Na) or lithium (Li), II and IV are Zn or Sn, and VI is a chalcogens selected from the group comprising: sulphur (S), selenium (Se) or tellurium (Te). The crystal phase of the alkali metal quaternary crystalline nanomaterial may be a primitive mixed Cu—Au like structure (PMCA) and may have a space group: P42m. The nanomaterials may be adapted to provide a solar cell. Methods of manufacture are also provided.

A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same:
M.sup.1M.sup.2Cha.sub.3  Chemical Formula 1 wherein M.sup.1 is Ca, Sr, Ba, or a combination thereof, M.sup.2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.