Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

A process for producing a silicon nitride powder characterized by comprising a step of providing a starting material powder containing not less than 90% by mass of a silicon powder; the step of filling a heat-resistant reaction vessel with the starting material powder; a step of obtaining a massive product thereof by a combustion synthesis reaction by igniting the starting material powder filled in the reaction vessel in a nitrogen atmosphere and permitting a heat of nitriding combustion of silicon to propagate to the whole starting material powder; and a step of mechanically milling the massive product by a dry method.

Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510 C. to 1300 C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

A silicon nitride (SiN.sub.x) based anode is produced by combining a silicon precursor that includes cyclohexasilane and a nitrogen precursor. A doped silicon based anode is produced by combining a silicon precursor that includes cyclohexasilane and a dopant precursor selected from a boron precursor, a nitrogen precursor, a sulfur precursor, an aluminum precursor, a phosphorous precursor, and combinations thereof. Silicon nanowires are produced by depositing metallic nanoparticles on surfaces of carbon support particles and then depositing silicon from cyclohexasilane onto the carbon support particles. The silicon preferentially deposits onto the metallic nanoparticles to form silicon nanowires that extend off of the metallic nanoparticle away from the surfaces.

Provided is a method for preparing silicon nitride powder for manufacturing a substrate. The method for preparing silicon nitride powder for manufacturing a substrate, according to an embodiment of the present invention, comprises the steps of: preparing mixed raw material powder comprising metallic silicon powder and crystalline phase control powder; preparing the mixed raw material powder into granules having a predetermined particle size; nitrifying the granules at a predetermined temperature ranging from 1,200-1,500? C. while nitrogen gas is applied to the granules at a predetermined pressure; and pulverizing the nitrified granules. According to the method, it is easy to realize powder having an ? crystal phase at a desired level, and when this is realized as a substrate, a substrate having compact density can be manufactured.

Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.