In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Nano-structures of Aluminum Nitride and a method of producing nano-structures of Aluminum Nitride from nut shells comprising milling agricultural nuts into a fine nut powder, milling nanocrystalline Al.sub.2O.sub.3 into a powder, mixing, pressing the fine nut powder and the powder of nanocrystalline Al.sub.2O.sub.3, heating the pellet, maintaining the temperature of the pellet at about 1400° C., cooling the pellet, eliminating the residual carbon, and forming nano-structures of AlN. An Aluminum Nitride (AlN) product made from the steps of preparing powders of agricultural nuts using ball milling, preparing powders of nanocrystalline Al.sub.2O.sub.3, mixing the powders of agricultural nuts and the powders of nanocrystalline Al.sub.2O.sub.3 forming a homogenous sample powder of agricultural nuts and Al.sub.2O.sub.3, pressurizing, pyrolizing the disk, and reacting the disk and the nitrogen atmosphere and forming AlN.

The present invention relates to a method for producing a metal nitride by igniting a raw material powder containing a metal powder filled in a reaction vessel under a nitrogen atmosphere and propagating nitriding combustion heat generated by a nitriding reaction of the metal to the whole raw material powder, the method including forming a heat insulating layer made of a material having nitrogen permeability and inert to the nitriding reaction on an upper surface of a layer made of the raw material powder. According to the present invention, it is possible to provide a method for reducing the amount of unreacted metal powder when producing a metal nitride by a combustion synthesis method.

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.

A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.

Provided is an aluminum nitride powder useful as a raw material when an aluminum nitride sintered body excellent as an insulating high thermal conductive member is manufactured, particularly, by press molding.

An aluminum nitride powder includes particles having a sphericity of 0.8 or more, in which a median size D.sub.50 obtained by a laser diffraction method is 0.5 to 1.5 μm, a ratio D.sub.90/D.sub.50 of a particle size D.sub.90 corresponding to a cumulative undersize distribution of 90% to the D.sub.50 is 2.2 or less, a BET specific surface area is 2 to 4 m.sup.2/g, and a total oxygen concentration is 0.6 to 1.2% by mass.

Nano-structures of Aluminum Nitride and a method of producing nano-structures of Aluminum Nitride from nut shells comprising milling agricultural nuts into a fine nut powder, milling nanocrystalline Al.sub.2O.sub.3 into a powder, mixing, pressing the fine nut powder and the powder of nanocrystalline Al.sub.2O.sub.3, heating the pellet, maintaining the temperature of the pellet at about 1400° C., cooling the pellet, eliminating the residual carbon, and forming nano-structures of AlN. An Aluminum Nitride (AlN) product made from the steps of preparing powders of agricultural nuts using ball milling, preparing powders of nanocrystalline Al.sub.2O.sub.3, mixing the powders of agricultural nuts and the powders of nanocrystalline Al.sub.2O.sub.3 forming a homogenous sample powder of agricultural nuts and Al.sub.2O.sub.3, pressurizing, pyrolyzing the disk, and reacting the disk and the nitrogen atmosphere and forming AlN.

An insulating filler composed of a mixed powder in which a hydrophobic fumed oxide powder having an average primary particle size D.sub.1, which is smaller than an average primary particle size D.sub.2, is adhered to the surface of a magnesium oxide powder and/or a nitride-based inorganic powder having the average primary particle size D.sub.2, wherein: the ratio D.sub.1/D.sub.2 of the average primary particle size D.sub.1 to the average primary particle size D.sub.2 is 6×10.sup.−5 to 3×10.sup.−3; the volume resistivity of the mixed powder is 1×10.sup.11 Ω.Math.m or more; and the content ratio of the hydrophobic fumed oxide powder in the mixed powder is 5-30 mass %. Also provided is an insulating material in which the above-mentioned insulating filler is contained in a resin molded body.