Patent classifications
C01B21/0844
SYSTEMS AND METHODS FOR STORAGE AND SUPPLY OF F3NO-FREE FNO GASES AND F3NO-FREE FNO GAS MIXTURES FOR SEMICONDUCTOR PROCESSES
A method for storage and supply of a F3NO-free FNO-containing gas comprises the steps of storing the F3NO-free FNO-containing gas in a NiP coated steel cylinder with a polished inner surface, releasing the F3NO-free FNO-containing gas from the cylinder to a manifold assembly by activating a cylinder valve in fluid communication with the cylinder and the manifold assembly, de-pressurizing the F3NO-free FNO-containing gas by activating a pressure regulator in the manifold assembly so as to divide the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator, and feeding the de-pressurized F3NO-free FNO-containing gas to a target reactor downstream of the second pressure zone.
SYSTEMS AND METHODS FOR STORAGE AND SUPPLY OF F3NO-FREE FNO GASES AND F3NO-FREE FNO GAS MIXTURES FOR SEMICONDUCTOR PROCESSES
Disclosed are systems and methods for supplying a F.sub.3NO-free FNO-containing gas and systems and methods for etching using the F.sub.3NO-free FNO-containing gas. The system comprises a NiP coated steel cylinder with a polished inner surface to store the F.sub.3NO-free FNO-containing gas, a cylinder valve to release the F.sub.3NO-free FNO-containing gas from the cylinder, a manifold assembly, including a pressure regulator and line components to deliver the F.sub.3NO-free FNO-containing gas to a target reactor. The pressure regulator de-pressurizes the F.sub.3NO-free FNO-containing gas in the manifold assembly thereby dividing the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator. A gaseous composition comprises F.sub.3NO-free FNO gas containing less than approximately 1% F.sub.3NO impurity by volume and an inert gas being capable of suppressing the concentration of F.sub.3NO impurity in the F.sub.3NO-free FNO gas.
Systems and methods for storage and supply of F3NO-free FNO gases and F3NO-free FNO gas mixtures for semiconductor processes
A method for storage and supply of a F3NO-free FNO-containing gas comprises the steps of storing the F3NO-free FNO-containing gas in a NiP coated steel cylinder with a polished inner surface, releasing the F3NO-free FNO-containing gas from the cylinder to a manifold assembly by activating a cylinder valve in fluid communication with the cylinder and the manifold assembly, de-pressurizing the F3NO-free FNO-containing gas by activating a pressure regulator in the manifold assembly so as to divide the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator, and feeding the de-pressurized F3NO-free FNO-containing gas to a target reactor downstream of the second pressure zone.
METHOD FOR STORING FLUORINE-CONTAINING NITROGEN COMPOUND
There is provided a method for storing a fluorine-containing nitrogen compound that prevents the progress of decomposition of the fluorine-containing nitrogen compound during storage. The fluorine-containing nitrogen compound, which is at least one type among nitrosyl fluoride, nitroyl fluoride, and trifluoroamine-N-oxide, contains or does not contain at least one type among manganese, cobalt, nickel, and silicon as metal impurities. When any of the foregoing is contained, the fluorine-containing nitrogen compound is stored in a container with the total concentration of the manganese, the cobalt, the nickel, and the silicon set to 1000 ppb by mass or less.
METHOD FOR STORING FLUORINE-CONTAINING NITROGEN COMPOUND
There is provided a method for storing a fluorine-containing nitrogen compound that prevents the progress of a reaction of the fluorine-containing nitrogen compound during storage. A fluorine-containing nitrogen compound containing nitrosyl fluoride and nitroyl fluoride contains or does not contain at least one type among sodium, potassium, magnesium, and calcium as metal impurities. When any of the foregoing is contained, the fluorine-containing nitrogen compound is stored in a container with the total concentration of the sodium, the potassium, the magnesium, and the calcium set to 1000 ppb by mass or less.