A process for exfoliating graphene, includes a step of irradiating a first substrate comprising graphene on its surface, with a helium or hydrogen plasma containing ions of energy comprised between 10 and 60 eV. A process for fabricating graphene on the surface of a second substrate, comprising the exfoliating process.

A conductive material, and a method for preparing the same are provided. The conductive material has a structure where a plurality of graphene sheets are interconnected, wherein an oxygen content is 1 wt % or higher based on the total weight of the conductive material, and a D/G peak ratio is 2.0 or less when the Raman spectrum is measured.

A method for continuously mass-manufacturing graphene using thermal plasma, the method for continuously mass-manufacturing graphene includes the steps of: (a) injecting an inert gas into a plasma device to generate plasma; (b) injecting expandable graphite and graphite intercalation compounds (GIC) into the plasma device in constant amounts; and (c) allowing the expandable graphite and GIC to be expanded by thermal plasma treatment so that graphene is exfoliated.

The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociated to form carbon dimers and trimmers. Upon cooling semi-crystalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-crystalline carbon film to CO.sub.2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

The present invention relates in part to a method of fabricating graphene structures from graphene oxide by reducing the graphene oxide on a patterned substrate. The invention also relates in part to graphene structures produced using said method and electrodes and capacitors comprising said graphene structures.

A method for the manufacture of pristine graphite from Kish graphite including three different steps A, B and C; the pristine obtained with among others a high amount of carbon atoms, i.e. a pristine graphene having a high purity; and the use of this pristine graphene.

The present invention relates to preparation of a highly dispersible graphene powder. Further, the present invention includes providing an electrode for a lithium ion battery having good output characteristics and cycle characteristics by utilizing a highly dispersible graphene powder. The present invention also includes providing a graphene powder having a specific surface area of 80 m.sup.2/g or more to 250 m.sup.2/g or less as measured by BET measurement, and an oxygen-to-carbon element ratio of 0.09 or more to 0.30 or less as measured by X-ray photoelectron spectroscopy.

Provided are a method for preparing a vertical branched graphene comprising treating a pristine vertical graphene with an inert plasma in the absence of an introduced carbon source to develop a vertical branched graphene. The method may also include pre-treating a substrate surface with an inert plasma; depositing a pristine vertical graphene onto the substrate surface by contacting the substrate surface with a deposition plasma comprising a carbon source gas for a deposition period. Also provided are a vertical branched graphene attached to a substrate surface, the vertical branched graphene having a trunk portion extending from the substrate surface, said trunk possessing an increased degree of branching as the distance from the substrate surface increases; and a freestanding branched graphene with a proximal end and a distal end, the proximal end comprising a trunk portion, the trunk portion possessing and increased degree of branching as the distance from the proximal end increases and the distance to the distal end decreases.

Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp.sup.2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

There are provided a graphene having an oxygen atom content in a predetermined range or less and a carbon/oxygen weight ratio in a specific range to show excellent electrical and thermal conductivity properties, and a barrier property, and a method and an apparatus for preparing the graphene having excellent electrical and thermal conductivity properties and a barrier property by using a subcritical-state fluid or a supercritical-state fluid. According to the method and the apparatus for preparing the graphene, impurities such as graphene oxide, and the like, may be effectively removed, such that uniformity of the graphene to be prepared may be increased, and therefore, the graphene which is highly applicable as materials throughout the industry may be mass-produced.