Integrated plants and associated processes for producing ammonia and sulfuric acid have been developed comprising air separation and water electrolysis subsystems and which make surprisingly efficient use of the products from these subsystems (i.e. oxygen and nitrogen from the former and hydrogen and oxygen from the latter). The invention is particularly suitable for use as part of an integrated fertilizer production plant.

Disclosed is a system developed for obtaining high purity (minimum 99.999%) nitrogen gas in nitrogen gas purification applications and drying obtained nitrogen gas before applying it on areas of use, and to an operating method of said system.

Disclosed is a method for purifying a main gas, in particular helium, from a source gas stream comprising the main gas, a main impurity, in particular nitrogen, and optionally another, secondary impurity, in particular oxygen, the method comprising a step of partial condensation of the gas stream in order to extract therefrom impurities in liquid form, in particular the main impurity, and to produce a gas stream enriched with main gas, characterized in that the method comprises, before the partial condensation step, a step of injecting into the gas stream a compound in which the main impurity of the gas to be treated is soluble and having a saturation vapor pressure lower than the saturation vapor pressure of the main impurity.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Redundant electrochemical systems and methods for vehicles are described. The systems include a first electrochemical device located at a first position on the vehicle wherein the first electrochemical device is configured to generate at least one of inert gas, oxygen, and electrical power and a second electrochemical device located at a second position on the vehicle wherein the second electrochemical device is configured to generate at least one of inert gas, oxygen, and electrical power. The first electrochemical device is configured to operate in a first mode during normal operation of the vehicle and a second mode when the second electrochemical device fails, wherein in the second mode, the first electrochemical device provides the at least one of inert gas, oxygen, and electrical power for at least one vehicle critical system of the vehicle.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

The present invention relates to an adsorption process for xenon recovery from a cryogenic liquid or gas stream wherein a bed of adsorbent is contacted with a xenon-containing liquid or gas stream selectively adsorbing the xenon from said stream. The adsorption bed is operated to at least near full breakthrough with xenon to enable a deep rejection of other stream components, prior to regeneration using the temperature swing method. After the stripping step, the xenon adsorbent bed is drained to clear out the liquid residue left in the nonselective void space and the xenon molecules in those void spaces is recycled upstream to the ASU distillation column for increasing xenon recovery. The xenon adsorbent bed is optionally purged with oxygen, followed by purging with gaseous argon at cryogenic temperature (≤160 K) to displace the oxygen co-adsorbed on the AgX adsorbent due to higher selectivity of argon over oxygen on the AgX adsorbent. By the end of this step, the xenon adsorbent bed is filled with argon and xenon. Then the entire adsorbent bed is heated indirectly without utilizing any of the purge gas for direct heating. Operating the adsorption bed to near full breakthrough with xenon and displacing the adsorbed oxygen and other residues with argon, prior to regeneration, along with indirect heating of the bed, enables production of a high purity product ≥40 vol % xenon from the adsorption bed and further enables safely heating without any purge gas and ease for downstream product collection, even in cases where hydrocarbons are co-present in the feed stream.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

A fluid system includes an inlet conduit disposed in a fluid flow path between a fluid source and a fluid destination. The fluid conduit includes a fluid mixing portion. The fluid system includes a fluid separation module disposed in the flow path downstream of the constriction between the source and the destination. The fluid separation module includes a first fluid separator, The fluid system includes a second fluid separator disposed in the flow path upstream of the first fluid separator, The fluid system includes a feedback conduit that may provide fluid communication between an outlet of the fluid separation module and the fluid mixing portion.

The invention relates to a process for removing oxygen from liquid argon using a TSA (temperature swing adsorption) cyclical process that includes cooling an adsorbent bed to sustain argon in a liquid phase; supplying the adsorbent bed with a liquid argon feed that is contaminated with oxygen and purifying the liquid argon thereby producing an argon product with less oxygen contaminant than is in the initial liquid argon feed; draining the purified residual liquid argon product and sending purified argon out of the adsorbent bed. Regeneration of specially prepared adsorbent allows the adsorbent bed to warm up to temperatures that preclude the use of requiring either vacuum or evacuation of adsorbent from the bed.