A method for producing a high-purity hydrogen chloride gas comprises performing a purification process that includes the steps 1) to 3) below on a byproduct hydrogen chloride gas: 1) a crude hydrochloric acid generation step of allowing water to absorb the byproduct hydrogen chloride gas; 2) a volatile organic impurity-removed hydrochloric acid generation step of bringing the crude hydrochloric acid obtained in the step 1) into contact with an inert gas at a liquid temperature of 20 to 45° C. to dissipate volatile organic impurities; and 3) a high-purity hydrogen chloride gas generation step of supplying the volatile organic impurity-removed hydrochloric acid obtained in the step 2) to a distillation column and performing distillation under conditions of a column bottom temperature of higher than 60° C. and 108° C. or lower and a column top temperature of 60° C. or lower to distill out a high-purity hydrogen chloride gas.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Systems and methods for purifying a carbon dioxide gas mixture are disclosed. A carbon dioxide purification and in liquefaction unit integrated with an external hydrocarbon dosing system is used to purify a mixture that includes (1) primarily carbon dioxide and (2) other material including an organic chloride and other organic hydrocarbons. The organic chloride in the mixture may be substantially removed via controlling the amount of the organic chloride reacted in the reactor of the carbon dioxide purification and liquefaction unit. The controlling of the organic chloride content is executed by the external hydrocarbon dosing system. The external hydrocarbon dosing system is configured to maintain a temperature of the effluent from the reactor within a predetermined range via controlling the flow rate of the external hydrocarbon into the mixture.

A process for removing hydrogen and methanol from a CO2 stream which contains hydrogen and methanol as contaminants, wherein hydrogen and methanol are removed by contacting the CO2 stream with a catalyst which oxidizes hydrogen to water and methanol to carbon dioxide, obtaining a purified CO2 stream.

A process for removing hydrogen and methanol from a CO2 stream which contains hydrogen and methanol as contaminants, wherein hydrogen and methanol are removed by contacting the CO2 stream with a catalyst which oxidizes hydrogen to water and methanol to carbon dioxide, obtaining a purified CO2 stream.

A method for producing a high-purity hydrogen chloride gas comprises performing a purification process that includes the steps 1) to 3) below on a byproduct hydrogen chloride gas: 1) a crude hydrochloric acid generation step of allowing water to absorb the byproduct hydrogen chloride gas; 2) a volatile organic impurity-removed hydrochloric acid generation step of bringing the crude hydrochloric acid obtained in the step 1) into contact with an inert gas at a liquid temperature of 20 to 45 C. to dissipate volatile organic impurities; and 3) a high-purity hydrogen chloride gas generation step of supplying the volatile organic impurity-removed hydrochloric acid obtained in the step 2) to a distillation column and performing distillation under conditions of a column bottom temperature of higher than 60 C. and 108 C. or lower and a column top temperature of 60 C. or lower to distill out a high-purity hydrogen chloride gas.