A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.

Methods and materials for providing corrosion protection for atomically thin materials are described. In some embodiments, an atomically thin material may have a coating that includes one or more alkyl amine species. The coating may cover at least a portion of the atomically thin material, and the coating may form a corrosion protection layer. Depending on the particular materials, a coating may be ionically bonded to at least a portion of an atomically thin material. In some embodiments, a method of forming a corrosion protection layer on at least a portion of an atomically thin material may involve exposing at least a portion of an atomically thin material that corrodes under normal atmospheric conditions to an alkyl amine.

The present invention provides a titanium ligand-modified black phosphorus and the preparation method and use thereof. The titanium ligand-modified black phosphorus is a complex of black phosphorus and a titanium ligand having a structure represented by formula (I): ##STR00001##
wherein in the formula (I), R.sub.1 comprises C.sub.1-C.sub.6 alkyl, or phenyl optionally further substituted with 0 to 5 groups each independently selected from halogen atom, C.sub.1-C.sub.6 alkyl, nitro, hydroxy, amino or C.sub.1-C.sub.3 alkoxy; the C.sub.1-C.sub.6 alkyl or C.sub.1-C.sub.3 alkoxy is optionally further substituted with 0 to 3 groups each independently selected from halogen atom, nitro, hydroxy, amino, methyl, ethyl or n-propyl. The titanium ligand-modified black phosphorus of the present invention is not likely oxidized without changing inherent properties of the black phosphorus, and the antioxidant capacity is greatly enhanced.

A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.

The present invention provides a titanium ligand-modified black phosphorus and the preparation method and use thereof. The titanium ligand-modified black phosphorus is a complex of black phosphorus and a titanium ligand having a structure represented by formula (I):

##STR00001##

wherein in the formula (I), R.sub.1 comprises C.sub.1-C.sub.6 alkyl, or phenyl optionally further substituted with 0 to 5 groups each independently selected from halogen atom, C.sub.1-C.sub.6 alkyl, nitro, hydroxy, amino or C.sub.1-C.sub.3 alkoxy; the C.sub.1-C.sub.6 alkyl or C.sub.1-C.sub.3 alkoxy is optionally further substituted with 0 to 3 groups each independently selected from halogen atom, nitro, hydroxy, amino, methyl, ethyl or n-propyl. The titanium ligand-modified black phosphorus of the present invention is not likely oxidized without changing inherent properties of the black phosphorus, and the antioxidant capacity is greatly enhanced.