Process for manufacturing a hydrogen-containing synthesis gas from a natural gas feedstock, comprising the conversion of said natural gas into a raw product gas and purification of said product gas, the process having a heat input provided by combustion of a fuel; said process comprises a step of conversion of a carbonaceous feedstock, and at least a portion of said fuel is a gaseous fuel obtained by said step of conversion of said carbonaceous feedstock, and the Wobbe Index of said fuel is increased by a step of carbon dioxide removal or methanation.

Process for manufacturing a hydrogen-containing synthesis gas from a natural gas feedstock, comprising the conversion of said natural gas into a raw product gas and purification of said product gas, the process having a heat input provided by combustion of a fuel; said process comprises a step of conversion of a carbonaceous feedstock, and at least a portion of said fuel is a gaseous fuel obtained by said step of conversion of said carbonaceous feedstock, and the Wobbe Index of said fuel is increased by a step of carbon dioxide removal or methanation.

The invention relates to a process and a plant for producing pure hydrogen from an input gas containing hydrogen and hydrocarbons, in particular from a hydrogen-containing refinery off-gas, by steam reforming in a steam reforming stage and multi-stage hydrogen enrichment. According to the invention the input gas containing hydrogen and hydrocarbons is separated in a first hydrogen enrichment stage into a hydrogen-enriched substream and a hydrogen-depleted substream, wherein at least a portion of the hydrogen-enriched substream is supplied to a second hydrogen enrichment stage or introduced into the pure hydrogen product stream and at least a portion of the hydrogen-depleted substream is supplied to the steam reforming stage as a reforming feed stream or as part thereof and/or to the burners as a fuel gas stream.

The invention relates to a process and a plant for producing pure hydrogen from an input gas containing hydrogen and hydrocarbons, in particular from a hydrogen-containing refinery off-gas, by steam reforming in a steam reforming stage and multi-stage hydrogen enrichment. According to the invention the input gas containing hydrogen and hydrocarbons is separated in a first hydrogen enrichment stage into a hydrogen-enriched substream and a hydrogen-depleted substream, wherein at least a portion of the hydrogen-enriched substream is supplied to a second hydrogen enrichment stage or introduced into the pure hydrogen product stream and at least a portion of the hydrogen-depleted substream is supplied to the steam reforming stage as a reforming feed stream or as part thereof and/or to the burners as a fuel gas stream.

A synthesis gas production apparatus (reformer) to be used for a synthesis gas production step in a GTL (gas-to-liquid) process is prevented from being contaminated by metal components. A method of suppressing metal contamination of a synthesis gas production apparatus operating for a GTL process that includes a synthesis gas production step of producing synthesis gas by causing natural gas and gas containing steam and/or carbon dioxide to react with each other for reforming in a synthesis gas production apparatus in which, at the time of separating and collecting a carbon dioxide contained in the synthesis gas produced in the synthesis gas production step and recycling the separated and collected carbon dioxide as source gas for the reforming reaction in the synthesis gas production step, a nickel concentration in the recycled carbon dioxide is not higher than 0.05 ppmv.

A synthesis gas production apparatus (reformer) to be used for a synthesis gas production step in a GTL (gas-to-liquid) process is prevented from being contaminated by metal components. A method of suppressing metal contamination of a synthesis gas production apparatus operating for a GTL process that includes a synthesis gas production step of producing synthesis gas by causing natural gas and gas containing steam and/or carbon dioxide to react with each other for reforming in a synthesis gas production apparatus in which, at the time of separating and collecting a carbon dioxide contained in the synthesis gas produced in the synthesis gas production step and recycling the separated and collected carbon dioxide as source gas for the reforming reaction in the synthesis gas production step, a nickel concentration in the recycled carbon dioxide is not higher than 0.05 ppmv.

A method of obtaining purified hydrogen and purified carbon monoxide from crude synthesis gas. A first crude synthesis gas stream is passed through a first separation zone to separate a hydrogen stream from a stream comprising carbon monoxide and methane. The carbon monoxide and methane are subjected to thermal reforming to produce a second crude synthesis gas, which is passed through a second separation zone to separate carbon monoxide from the second crude synthesis gas stream.

A method of obtaining purified hydrogen and purified carbon monoxide from crude synthesis gas. A first crude synthesis gas stream is passed through a first separation zone to separate a hydrogen stream from a stream comprising carbon monoxide and methane. The carbon monoxide and methane are subjected to thermal reforming to produce a second crude synthesis gas, which is passed through a second separation zone to separate carbon monoxide from the second crude synthesis gas stream.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.