To provide a rolling bearing having a hard film on an inner ring raceway surface and an outer ring raceway surface of the rolling bearing that improves peeling resistance of the hard film, shows the original property of the hard film, and suppresses the attackability to a mating material. A rolling bearing 1 has an inner ring 2 having an inner ring raceway surface 2a on an outer circumference, an outer ring 3 having an outer ring raceway surface 3a on an inner circumference, and rolling elements 4 that roll between the inner ring raceway surface 2a and the outer ring raceway surface 3a. A hard film 8 includes a foundation layer formed directly on the inner ring raceway surface 2a or the outer ring raceway surface 3a and mainly formed of Cr and WC, a mixed layer having a gradient composition formed on the foundation layer and mainly formed of WC and DLC, and a surface layer formed on the mixed layer and mainly formed of DLC. In a roughness curve of a surface on which the foundation layer is formed, the arithmetical mean roughness Ra is 0.3 μm or less and the root mean square gradient RΔq is 0.05 or less.

A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

A paste that includes particles of a layered material in an ammonia aqueous solution. The particles include one or plural layers, the layers having a layer body represented by M.sub.mX.sub.n, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom, wherein the paste has a viscosity of 1 Pa.Math.s or more at a shear velocity of 1/s when the paste has a solid content concentration of 1.0% by mass.

Provided are an anisotropic rare earth sintered magnet having a ThMn.sub.12-type crystal compound as a main phase and exhibits good magnetic characteristics, and a method for producing it. The anisotropic rare earth sintered magnet has a composition of a formula (R.sub.1-aZr.sub.a).sub.v(Fe.sub.1-bCo.sub.b).sub.100-v-w-x-y(M.sup.1.sub.1-cM.sup.2.sub.c).sub.wO.sub.xC.sub.y (where R is one or more kinds selected from rare earth elements and indispensably includes Sm, M.sup.1 is one or more kinds of elements selected from the group consisting of V, Cr, Mn, Ni, Cu, Zn, Ga, Al, and Si, M.sup.2 is one or more kinds of elements selected from the group consisting of Ti, Nb, Mo, Hf, Ta, and W, and v, w, x, y, a, b, and c each satisfy 7≤v≤15 at %, 4≤w≤20 at %, 0.2≤x≤4 at %, 0.2≤y≤2 at %, 0≤a≤0.2, 0≤b≤0.5, and 0≤c≤0.9), which contains a main phase of a ThMn.sub.12-type crystal compound in an amount of 80% by volume or more with the average crystal particle diameter of the main phase being 1 μm or more, which contains an R oxycarbide in the grain boundary area, and which has a density of 7.3 g/cm.sup.3 or more. The production method for the anisotropic rare earth sintered magnet includes grinding an alloy that contains a ThMn.sub.12-type crystal compound phase but does not contain an oxycarbide, then molding it in a mode of pressure powder molding with magnetic field application thereto to give a molded article, and thereafter sintering it at a temperature of 800° C. or higher and 1400° C. or lower to form an oxycarbide in the grain boundary area.

Provided are an anisotropic rare earth sintered magnet having a ThMn.sub.12-type crystal compound as a main phase and exhibits good magnetic characteristics, and a method for producing it. The anisotropic rare earth sintered magnet has a composition of a formula (R.sub.1-aZr.sub.a).sub.v(Fe.sub.1-bCo.sub.b).sub.100-v-w-x-y(M.sup.1.sub.1-cM.sup.2.sub.c).sub.wO.sub.xC.sub.y (where R is one or more kinds selected from rare earth elements and indispensably includes Sm, M.sup.1 is one or more kinds of elements selected from the group consisting of V, Cr, Mn, Ni, Cu, Zn, Ga, Al, and Si, M.sup.2 is one or more kinds of elements selected from the group consisting of Ti, Nb, Mo, Hf, Ta, and W, and v, w, x, y, a, b, and c each satisfy 7≤v≤15 at %, 4≤w≤20 at %, 0.2≤x≤4 at %, 0.2≤y≤2 at %, 0≤a≤0.2, 0≤b≤0.5, and 0≤c≤0.9), which contains a main phase of a ThMn.sub.12-type crystal compound in an amount of 80% by volume or more with the average crystal particle diameter of the main phase being 1 μm or more, which contains an R oxycarbide in the grain boundary area, and which has a density of 7.3 g/cm.sup.3 or more. The production method for the anisotropic rare earth sintered magnet includes grinding an alloy that contains a ThMn.sub.12-type crystal compound phase but does not contain an oxycarbide, then molding it in a mode of pressure powder molding with magnetic field application thereto to give a molded article, and thereafter sintering it at a temperature of 800° C. or higher and 1400° C. or lower to form an oxycarbide in the grain boundary area.

A method of synthesizing a MXene material is provided. A starting MAX phase material can be selected, a reaction time and/or reaction temperature can be determined, and subsequently a MXene material can be generated through etching the MAX phase material in an etching solution based on at least one of the determined reaction time and/or reaction temperature. In some instances, the etching solution is an LiF/HCl solution.

A method of synthesizing a MXene material is provided. A starting MAX phase material can be selected, a reaction time and/or reaction temperature can be determined, and subsequently a MXene material can be generated through etching the MAX phase material in an etching solution based on at least one of the determined reaction time and/or reaction temperature. In some instances, the etching solution is an LiF/HCl solution.

Provided are methods of effecting cation exchange in MXene materials so as to stabilize the materials. Also provided are compositions, comprising layered MXene materials that comprise an organic cation between layers. Also provided are MXene compositions comprising a chalcogen disposed thereon, the MXene composition further optionally comprising a quaternary ammonium halide disposed thereon.

Provided are methods of effecting cation exchange in MXene materials so as to stabilize the materials. Also provided are compositions, comprising layered MXene materials that comprise an organic cation between layers. Also provided are MXene compositions comprising a chalcogen disposed thereon, the MXene composition further optionally comprising a quaternary ammonium halide disposed thereon.