C01B32/90

CONDUCTIVE TWO-DIMENSIONAL PARTICLE AND METHOD FOR PRODUCING THE SAME

A conductive two-dimensional particle of a layered material comprising one layer or one layer and plural layers, wherein the layer includes a layer body represented by: M.sub.mX.sub.n, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and a monovalent metal ion, wherein the conductive two-dimensional particle does not contain an amine, a total content of chlorine and bromine in the conductive two-dimensional particle is 1,500 ppm by mass or less, and an average value of a major diameter of a two-dimensional surface of the conductive two-dimensional particle is 1.0 μm to 20 μm.

CONDUCTIVE TWO-DIMENSIONAL PARTICLE AND METHOD FOR PRODUCING THE SAME

A conductive two-dimensional particle of a layered material comprising one layer or one layer and plural layers, wherein the layer includes a layer body represented by: M.sub.mX.sub.n, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and a monovalent metal ion, wherein the conductive two-dimensional particle does not contain an amine, a total content of chlorine and bromine in the conductive two-dimensional particle is 1,500 ppm by mass or less, and an average value of a major diameter of a two-dimensional surface of the conductive two-dimensional particle is 1.0 μm to 20 μm.

SiC epitaxial wafer and method for manufacturing same
11705329 · 2023-07-18 · ·

According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

SELECTIVE INFRARED THERMAL EMISSION AND STEALTH PROPERTIES OF MXENES
20230016229 · 2023-01-19 ·

Compositions and devices comprising MXene materials, suitable for use as selective and/or tunable infrared emitters and/or absorbers, and methods of making coatings with low thermal emissivities using coatings comprising MXene materials.

Carbon-based clathrate compounds

The present invention provides carbon-based clathrate compounds, including a carbon-based clathrate compound that includes a clathrate lattice with atoms of at least one element selected from the group consisting of carbon and boron as a host cage structure; guest atoms encapsulated within the clathrate lattice; and, substitution atoms that may be substituted for at least one portion of the carbon and boron atoms that constitute the clathrate lattice. In one embodiment, the invention provides a carbon-based clathrate compound of the formula LaB.sub.3C.sub.3.

Edge capping of 2D-MXene sheets with polyanionic salts to migitate oxidation in aqueous colloidal suspensions
11691878 · 2023-07-04 · ·

Provided are methods of stabilizing MXene compositions using polyanionic salts so as to reduce the oxidation of the MXenes. Also provided are stabilized MXene compositions.

Edge capping of 2D-MXene sheets with polyanionic salts to migitate oxidation in aqueous colloidal suspensions
11691878 · 2023-07-04 · ·

Provided are methods of stabilizing MXene compositions using polyanionic salts so as to reduce the oxidation of the MXenes. Also provided are stabilized MXene compositions.

Biomass treatment method

Provided is a novel carbonization treatment method for carbonizing a biomass material containing a large amount of water at an extremely low temperature, and a method for producing carbonized biomass. A water-containing biomass material is carbonized while maintaining the biomass material under treatment conditions including an oxygen-containing atmosphere and a temperature range of 70° C. or greater and less than 100° C., without a drying step for removing or reducing the water forcibly. At this time, preferably the water content (percentage) of the biomass material at the start of carbonization while maintained under the treatment conditions is within a range of 40 to 80% inclusive, and preferably the biomass material is thus maintained for two weeks or longer. Further, as the biomass material, one material or a mixture of two or more materials selected from waste biomass materials and plant (cultivated crop) biomass materials such as food waste, livestock excrement, agricultural waste, marine waste, and forest waste, can be applied.

Biomass treatment method

Provided is a novel carbonization treatment method for carbonizing a biomass material containing a large amount of water at an extremely low temperature, and a method for producing carbonized biomass. A water-containing biomass material is carbonized while maintaining the biomass material under treatment conditions including an oxygen-containing atmosphere and a temperature range of 70° C. or greater and less than 100° C., without a drying step for removing or reducing the water forcibly. At this time, preferably the water content (percentage) of the biomass material at the start of carbonization while maintained under the treatment conditions is within a range of 40 to 80% inclusive, and preferably the biomass material is thus maintained for two weeks or longer. Further, as the biomass material, one material or a mixture of two or more materials selected from waste biomass materials and plant (cultivated crop) biomass materials such as food waste, livestock excrement, agricultural waste, marine waste, and forest waste, can be applied.

MXENE COMPOSITIONS FEATURING FIVE ATOMIC LAYERS

Provided are 5-layered MXene materials having the formulas M.sub.5X.sub.4T.sub.x; (M′aM″b)X.sub.4T.sub.x (where a+b=5); and (M′.sub.aM″.sub.b).sub.5X.sub.4T.sub.x (where a+b=1). Also provided are related methods, compositions, and applications.