A copper-graphene bonded body is a copper-graphene bonded body including a copper member made of copper or a copper alloy and a ceramic member made of silicon nitride, the copper member. The copper member and the ceramic member are bonded to each other, between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metal selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

The present disclosure relates to a method for producing a metal carbide, where the method includes thermally treating a molecular precursor in an oxygen-free environment, such that the treating produces the metal carbide and the molecular precursor includes ##STR00001##
where M is the metal of the metal carbide, N* includes nitrogen or a nitrogen-containing functional group, and x is between zero and six, inclusively.

The present disclosure relates to a method for producing a metal carbide, where the method includes thermally treating a molecular precursor in an oxygen-free environment, such that the treating produces the metal carbide and the molecular precursor includes ##STR00001##
where M is the metal of the metal carbide, N* includes nitrogen or a nitrogen-containing functional group, and x is between zero and six, inclusively.

There is provided a silicon carbide powder having a small mean particle diameter and a narrow particle diameter distribution width. A silicon carbide powder is a powder of silicon carbide (SiC) having an α-type crystal form and has a mean particle diameter of 300 nm or less. In the silicon carbide powder, a ratio D90/D10 between a particle diameter D10 and a particle diameter D90 is 4 or less, the particle diameter D10 being a particle diameter at which the cumulative particle volume from the small particle diameter side in a volume-based cumulative particle diameter distribution reaches 10% of the total particle volume and the particle diameter D90 being a particle diameter at which the cumulative particle volume from the small particle diameter side in the volume-based cumulative particle diameter distribution reaches 90% of the total particle volume.

There is provided a silicon carbide powder having a small mean particle diameter and a narrow particle diameter distribution width. A silicon carbide powder is a powder of silicon carbide (SiC) having an α-type crystal form and has a mean particle diameter of 300 nm or less. In the silicon carbide powder, a ratio D90/D10 between a particle diameter D10 and a particle diameter D90 is 4 or less, the particle diameter D10 being a particle diameter at which the cumulative particle volume from the small particle diameter side in a volume-based cumulative particle diameter distribution reaches 10% of the total particle volume and the particle diameter D90 being a particle diameter at which the cumulative particle volume from the small particle diameter side in the volume-based cumulative particle diameter distribution reaches 90% of the total particle volume.

Methods for modifying the surface termination of two-dimensional (2D) transition metal carbides (MXenes) are provided. The methods, which allow for versatile chemical modification of the terminating anions via halide exchange or substitution and elimination reactions in molten inorganic salts, provide a processing approach that is widely applicable to MXenes as a broad class of functional materials.

The present disclosure is directed to electroacoustical devices comprising patterned MXene compositions on biaxially oriented polymer substrates and methods of making and using the same.

The present invention provides carbon-based clathrate compounds, including a carbon-based clathrate compound that includes a clathrate lattice with atoms of at least one element selected from the group consisting of carbon and boron as a host cage structure; guest atoms encapsulated within the clathrate lattice; and, substitution atoms that may be substituted for at least one portion of the carbon and boron atoms that constitute the clathrate lattice. In one embodiment, the invention provides a carbon-based clathrate compound of the formula LaB.sub.3C.sub.3.

A conductive two-dimensional particle of a layered material comprising one layer or one layer and plural layers, wherein the layer includes a layer body represented by: M.sub.mX.sub.n, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom, M of the layer is bonded to at least one selected from the group consisting of PO.sub.4.sup.3−, I, or SO.sub.4.sup.2−, the total content of chlorine and bromine is 1,500 ppm by mass or less, and an average value of major diameters of two-dimensional surfaces of the conductive two-dimensional particles is 1.0 μm or more.

A conductive two-dimensional particle of a layered material comprising one layer or one layer and plural layers, wherein the layer includes a layer body represented by: M.sub.mX.sub.n, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom, M of the layer is bonded to at least one selected from the group consisting of PO.sub.4.sup.3−, I, or SO.sub.4.sup.2−, the total content of chlorine and bromine is 1,500 ppm by mass or less, and an average value of major diameters of two-dimensional surfaces of the conductive two-dimensional particles is 1.0 μm or more.