Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700° C., b) directing metallurgical silicon in which the free carbon proportion is ≤150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes. As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700° C., b) directing metallurgical silicon in which the free carbon proportion is ≤150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes. As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

[Problem] To improve productivity of guest-free silicon clathrates

[Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.

[Problem] To improve productivity of guest-free silicon clathrates

[Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.

A crushed polycrystalline silicon lump is provided in which a surface metal concentration is 15.0 pptw or less and preferably 7.0 to 13.0 pptw, and in the surface metal concentration, a surface tungsten concentration is 0.9 pptw or less and preferably 0.40 to 0.85 pptw, and a surface cobalt concentration is 0.3 pptw or less and preferably 0.04 to 0.08 pptw.

A crushed polycrystalline silicon lump is provided in which a surface metal concentration is 15.0 pptw or less and preferably 7.0 to 13.0 pptw, and in the surface metal concentration, a surface tungsten concentration is 0.9 pptw or less and preferably 0.40 to 0.85 pptw, and a surface cobalt concentration is 0.3 pptw or less and preferably 0.04 to 0.08 pptw.

Systems, methods and compositions to produce fine powders are described. These include forming a hypereutectic melt including a target material, a sacrificial-matrix material, and an impurity, rapidly cooling the hypereutectic melt to form a hypereutectic alloy having a first phase and a second phase, annealing the hypereutectic alloy to alter a morphology of the target material to thereby produce target particles, and removing the sacrificial matrix to thereby produce a fine powder of the target particles. The first phase is defined by the target material and the second phase is defined by the sacrificial-matrix material. The sacrificial-matrix material forms a sacrificial matrix having the target material dispersed therethrough.

Systems, methods and compositions to produce fine powders are described. These include forming a hypereutectic melt including a target material, a sacrificial-matrix material, and an impurity, rapidly cooling the hypereutectic melt to form a hypereutectic alloy having a first phase and a second phase, annealing the hypereutectic alloy to alter a morphology of the target material to thereby produce target particles, and removing the sacrificial matrix to thereby produce a fine powder of the target particles. The first phase is defined by the target material and the second phase is defined by the sacrificial-matrix material. The sacrificial-matrix material forms a sacrificial matrix having the target material dispersed therethrough.

Provided is a novel production method for producing silicon clathrate II. In the production method for producing silicon clathrate II, in a reaction system in which a Na—Si alloy containing Na and Si and an Na getter agent coexist so as not to be in contact with each other, the Na—Si alloy is heated and Na evaporated from the Na—Si alloy is thus caused to react with the Na getter agent to reduce an amount of Na in the Na—Si alloy.

Provided is a novel production method for producing silicon clathrate II. In the production method for producing silicon clathrate II, in a reaction system in which a Na—Si alloy containing Na and Si and an Na getter agent coexist so as not to be in contact with each other, the Na—Si alloy is heated and Na evaporated from the Na—Si alloy is thus caused to react with the Na getter agent to reduce an amount of Na in the Na—Si alloy.