Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized. Further improvements in efficiencies may be realized by directing a portion of the product from a redistribution reactor into a distillation column, and specifically into the distillation column that formed the feedstock that went into the redistribution reactor.

By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Chlorosilanes of the general formula H.sub.nSiCl.sub.4-n and/or H.sub.mCl.sub.6-mSi.sub.2, where n=1-4 and m=0-4, are produced in a fluidized bed reactor by reaction of a hydrogen chloride-containing reaction gas with a silicon contact mass granulation mixture composed of a coarse grain fraction and a fine grain fraction, wherein the average particle size of the fine grain fraction d.sub.50,fine is smaller than the average particle size of the coarse grain fraction d.sub.50,coarse.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.

A column includes a column head, a column sump and a tube-shaped column shell disposed therebetween, two or more reaction zones lying above each other which each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas, and also into high-boiling silanes which form a downwardly directed stream of liquid, within the column shell and along the column axis, two or more rectificative separation zones, the reaction zones and the separation zones alternate along the column axis, the separation zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, and the reaction zones are configured such that the downwardly directed stream of liquid is led through the catalyst beds, whereas the upwardly directed stream of gas passes the catalyst beds in spatial separation from the stream of liquid.

A method and system for selectively recovering monochlorosilane and dichlorosilane from polysilicon production process are provided. The system and method selectively recover the monochlorosilane and the dichlorosilane contained in an exhaust stream discharged from a chemical vapor deposition unit for a polysilicon production process and the monochlorosilanes and the dichlorosilanes may be obtained with minimal capital investment or complexity.