Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by a) contacting the liquid mixture with a carrier material functionalized with an amidoxime of the general structural formula (I),

##STR00001##

where CAR=carrier material and R.sup.1, R.sup.2 are independently of one another H, alkyl, alkenyl, aryl, alkylaryl; and b) optionally removing the functionalized carrier material.

A method of producing a halosiloxane, the method comprising: combining water, a halosilane, and a first solvent, where the first solvent has a water solubility of >1.5 grams in 100 ml of solvent, to form a reaction mixture having a temperature above the melting point temperature of the solvent, partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, a hydrogen halide and unreacted halosilane, and, optionally, adding a second solvent with a boiling point≥the boiling point of the halosiloxane to the reaction mixture or the reaction product mixture.

Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.

Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.

A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof.

A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof.

Processes for separating conjunct polymer from an organic phase are described. A mixture comprising an ionic liquid phase and the organic phase into the ionic phase and an organic phase comprising the conjunct polymer and at least one silyl or boryl compound. The organic phase is separated in a fractionation column into an overhead fraction comprising unreacted silane or borane compound and a bottoms fraction comprising the conjunct polymer and the silyl or boryl compound. The bottoms fraction is passed through an adsorption zone, and the silyl or boryl compound is recovered. Alternatively, the organic phase is passed through an adsorption zone first to remove the conjunct polymer and then a fractionation zone to separate the unreacted silane or borane compound from the silyl or boryl compound.

Processes for separating conjunct polymer from an organic phase are described. A mixture comprising an ionic liquid phase and the organic phase into the ionic phase and an organic phase comprising the conjunct polymer and at least one silyl or boryl compound. The organic phase is separated in a fractionation column into an overhead fraction comprising unreacted silane or borane compound and a bottoms fraction comprising the conjunct polymer and the silyl or boryl compound. The bottoms fraction is passed through an adsorption zone, and the silyl or boryl compound is recovered. Alternatively, the organic phase is passed through an adsorption zone first to remove the conjunct polymer and then a fractionation zone to separate the unreacted silane or borane compound from the silyl or boryl compound.

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.